Promos Technologies, Inc

Industrial Technology Research Institute

Eternal Chemical Co., Ltd.

Benq Esco Corp.

Hung-Wen Chiou

Shyh-Dar Lee

Lai-Juh Chen

Tsung-Ho Lee

Tsui-Ping Yeh

Chung-I Chang

Han-Chung Lai

Chin-Wen Lee

Chia-Chun Tso

A method for identifying actions of an electric equipment is provided. The method includes: measuring a utility power signal of the electric equipment during a period of time; analyzing a waveform characteristic of the utility power signal in the period of time to acquire a set of characteristic values, and identifying a current control procedure corresponding to the utility power signal from a set of control procedures according to the set of characteristic values, the current control procedure including one or more action stages whose first action stage corresponds to a first action parameter; determining whether a deviation between the waveform characteristic of the utility power signal corresponding to the first action stage and the first action parameter is within a tolerance range; triggering a warning event when the deviation between the waveform characteristic of the utility power signal and the first action parameter is outside the tolerance range.

Method for identifying actions of electric equipment and system using the same

A run-to-run control system and a run-to-run controlling method are proposed. The tool process parameters are real-time collected during the semiconductor process is performed and are regarded as the effective factors in the process for providing an optimal operation variables to the tool for the next process run. After modeling the metrology parameters with a set of the tool process parameters with respect to the semiconductor process for its corresponding process run, a set of optimal operation variables is determined by the controller and output to the tool to modify the process recipe of the process. Hence, the process recipe is real-time changed with the process environment to obtain the optimal process performance.

Run-to-run control system and operating method of the same

An operating method for a fault detection of a semiconductor process and a diagnostic system for fault detection in a semiconductor process are described. By using the method and the diagnostic system, the real-time process parameters collected during the process is performed by the tool become meaningful and are correlated with the historic process performance data obtained by the post process metrology process. Moreover, the method and the diagnostic system further provide an alarm index for the process performed on the tool to actually reflect the process environment during the process is performed after correlating the real-time process parameters and the historic process performance data. With referring to the alarm index, the current process performance under the real-time process parameters in the tool can be accurately diagnosed.

Diagnostic system and operating method for the same

A new computer based method is provided for the evaluation of dielectric film properties. These properties are for a given dielectric derived from measurements of the chemical bonding of that dielectric. Previously collected reference data are maintained in a reference data base from where data are extracted and used as input to mathematical modeling software that predicts thin film properties. The output of these prediction algorithms is used, together with chemical bonding measurements of the dielectric that is being investigated, as input to a program that computers the dielectric properties of the dielectric.

Method to predict dielectric film properties using chemical bonding measurements as input to computer modeling

The present invention provides a method for signal vibration alert. The method of the present invention recognizes significant substantial swerves and corresponding substantial edge-to-edge differences by eliminating the adverse effect of noise among signals generated by an apparatus. When the frequency of the substantial edge-to-edge differences that exceed an acceptable range of the frequency limit is too large, the method of the present invention automatically generates an alert to indicate aberration in the apparatus such that the monitoring staff is informed and allowed to take necessary measures responding to the aberration.

Method for generating a signal vibration alert

A method and system for in-line monitoring process performance during wafer fabrication. First signals generated by a fabrication tool are collected and filtered to exclude abnormal signals while a model wafer is processed. The filtered first signals are regulated and normalized to generate model wafer data. After the fabrication process is completed, the model wafer is measured to generate a measured value representing the process quality thereof. The model wafer data and the measured value of the model wafer are used to build a correlation model by a correlation unit. Second signals generated by the fabrication tool are collected when a run wafer is processed, and then filtered to exclude abnormal signals. The filtered second signals are regulated and normalized to generate run wafer data. A predicted value representing the process quality of the run wafer is generated by inputting the run wafer data into the correlation model.

Method and system for in-line monitoring process performance using measurable equipment signals

The present invention provides a method of tool matching for a semiconductor manufacturing process having a first and second path completed by serial combinations of tools for processing of wafers. The method comprises the steps of providing a target value, obtaining a first and second test result of the wafers processed through the first and second path respectively, calculating differences between the first and second test result and the target value to obtain a first and second estimate respectively, and selecting one of the first and second paths according to the estimates.

Method and apparatus of tool matching for a semiconductor manufacturing process

A deposition process for silicon oxycarbide films suitable for use as anti-reflection coatings is described. The, process is based on plasma enhanced CVD of silane mixed with methyl-silane, trimethyl-silane, or tetramethyl-silane (together with a carrier gas). Provided the relative gas flow rates are maintained within the ranges specified, films having excellent ARL properties are obtained, with photoresist patterns formed on said films being free of overhangs and footings.

PECVD process for ULSI ARL

The invention provides a chemical-mechanical abrasive composition for semiconductor processing, which composition is characterized by comprising a water-soluble anionic chemical. According to the invention, said water-soluble anionic chemical would be coated on the surface of a metal film during the polishing of said metal film so as to inhibit the formation of depressions on the resultant metal circuits. In another aspect, the invention provides a chemical-mechanical abrasive composition in the form of a slurry comprising 70-99.5% by weight of an aqueous medium; 0.1-25% by weight of an abrasive particle; 0.01-2.0% by weight of an abrasion enhancer; and 0.01-1% by weight of a water-soluble anionic chemical. The chemical-mechanical abrasive composition of the invention may further comprise an oxidant to enhance the abrasion rate.

Chemical mechanical abrasive composition for use in semiconductor processing

A new method is provided to edge and bevel the periphery of a semiconductor substrate. The wafer is positioned in a horizontal plane and held in place against two positioning pegs. The wafer is rotated and slurry is distributed over the periphery of the substrate surface. The periphery of the wafer is entered into one or more abrasive fixtures, also referred to as bevel/edge heads. These abrasive fixtures will create the desired edge and the desired bevel around the periphery of the substrate.

Edge and bevel CMP of copper wafer

A method and apparatus are described for Chemical Mechanical Polishing of wafers which achieves a constant removal rate of material from the wafer over the entire surface of the wafer. The wafer is held in a wafer carrier rotating at a wafer carrier angular velocity and is polished using a platen rotating at a platen angular velocity. The pressure exerted on the wafer by the wafer carrier is the largest at the wafer edge and smallest at the center of the wafer. The wafer carrier is divided into a number of wafer carrier circular segments so that the temperature of each wafer carrier circular segment can be controlled. The platen is divided into a number of platen circular segments so that the temperature of each platen circular segment can be controlled. The temperatures of the wafer carrier circular segments and the platen circular segments are then adjusted to provide a removal rate of material from the wafer which is uniform across the surface of the wafer.

Growing community of inventors

Hsinchu, Taiwan

Hung-Wen Chiou