Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Hung-Wei Yu

Yi Chang

Tsun-Ming Wang

Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.

Epitaxies of a chemical compound semiconductor

A method includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure.

Method for growing epitaxies of a chemical compound semiconductor

Disclosed is a method of providing a chemical compound semiconductor channel layer on a substrate for use in a semiconductor fabrication process. The method comprises providing a prelayer over a substrate, providing a barrier layer over the prelayer, and providing an InAs or Sb-based channel layer over the barrier layer. The substrate comprises a gallium arsenide substrate, a silicon substrate, a germanium substrate, or a Ge/Si substrate. The prelayer comprises a graded-temperature arsenic prelayer grown with graded temperature ramped from 300 to 550&#xb0; C. The barrier layer comprises GaAs with low-growth-temperature growth or an InGaAs epitaxy with one or multiple GaAs-based layers. The channel layer comprises an InAs epitaxy with low-growth-temperature growth or Al(In)Sb/InAs/Al(In)Sb heterostructures with one or more pairs. Also disclosed is a wafer comprising a prelayer grown over a substrate using MOCVD operations, a barrier layer grown over the prelayer using MOCVD operations, and a channel layer grown over the barrier layer using MOCVD operations.

Growing community of inventors

Yilan County, Taiwan

Hung-Wei Yu