Globalfoundries Inc.

Other

Hung-Wei Liu

Zhiguo Sun

Huang Liu

Tsung-Liang Chen

Songkram Srivathanakul

Rohit Pal

Hsin-Neng Tai

Huey-Ming Wang

Danni Chen

Tae Hoon Lee

Jin Ping Liu

Daniel P Smith

Kumarapuram Gopalakrishnan

A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is optimized for gap fill near a substrate surface where high aspect ratio shapes are present. The oxygen gas flow rate increases as the film depth increases, such that the deposited film is optimized for planarization quality at the upper regions of the deposited film.

Method of forming a dielectric film

Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height.

Gate height uniformity in semiconductor devices

Devices and methods for forming semiconductor devices with a protection layer for a dielectric mask layer are provided. One method includes, for instance; obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. One intermediate semiconductor device includes, for instance: a substrate having at least one of a dielectric layer and a metal layer; a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer.

Methods of protecting a dielectric mask layer and related semiconductor devices

Methods of facilitating fabrication of defect-free semiconductor structures are provided which include, for instance: providing a dielectric layer, the dielectric layer comprising at least one consumable material; selectively removing a portion of the dielectric layer, wherein the selectively removing consumes, in part, a remaining portion of the at least one consumable material, leaving, within the remaining portion of the dielectric layer, a depleted region; and subjecting the depleted region of the dielectric layer to a treatment process, to restore the depleted region with at least one replacement consumable material, thereby facilitating fabrication of a defect-free semiconductor structure.

Methods of fabricating defect-free semiconductor structures

Methods of forming a semiconductor device are provided. The methods include, for example, forming a low-k dielectric having a continuous planar surface, and, after forming the low-k dielectric, subjecting the continuous planar surface of the low-k dielectric to an ethylene plasma enhanced chemical vapor deposition (PECVD) treatment.

Method of forming a low-K dielectric film

Growing community of inventors

Saratoga Springs, NY, United States of America

Hung-Wei Liu