Macronix International Co., Ltd.

Angstron Materials (asia) Limited

Hung-Wei Liu

Bor Z Jang

Aruna Zhamu

Szu-Yu Wang

Hsueh-Hao Shih

Feng-Yu Tsai

Fan-Chun Meng

Che-Chen Hsu

Guo-Cyuan Fang

Chin-Chuan Chang

Dung-Yue Su

A graphene dispersion includes a graphene material and a polymerizable monomer. The polymerizable monomer has a structure including the first part and the second part. The first part is at one end of the structure and includes at least one benzene ring, and the second part is at another end of the structure and has polarity.

Graphene dispersion and graphene reinforced polymer

The present invention is directed to forming memory wordlines having a relatively lower sheet resistance. In one embodiment, a control-gate poly layer including a first and a second poly-Si portion is deposited. a The first poly-Si portion is deposited on a semiconductor substrate using a first precursor gas flow rate. A The second poly-Si portion is deposited on the first poly-Si portion using a second precursor gas flow rate, where the second precursor flow rate higher than the first precursor gas flow rate. A tungsten silicide layer is then deposited. A wordline is formed from a stacked film of the control-gate poly layer and tungsten silicide layer. The control-gate poly layer and tungsten silicide layer are then patterned to form a gate electrode, and a implantation process is made, after or before, forming the tungsten silicide layer.

Methods for reducing wordline sheet resistance

Growing community of inventors

Hsinchu, Taiwan

Hung-Wei Liu