United Microelectronics Corp.

Hung-Wei Lin

Ping-Chia Shih

Chi-Cheng Huang

An-Hsiu Cheng

Chin-Lung Lin

Yu-Chun Chen

Ya-Sheng Feng

Chih-Hung Wang

Kuo-Lung Li

Chih-Hao Pan

Zi-Jun Liu

Ling-Hsiu Chou

Kuan-Wen Fang

Po-Ching Su

Sheng-Lung Teng

Lun-Wen Yeh

Cheng-Hua Chou

Yen-Hung Chen

Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.

Semiconductor structure and method of forming the same

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

Semiconductor device and manufacturing method thereof

An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Optical proximity correction method

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Kaohsiung, Taiwan

Hung-Wei Lin