Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-Wei Ho

Hsin-Chi Chen

Hsun-Ying Huang

Chih-Ming Lee

Chao-Ching Chang

Shang-Yen Wu

Tsung-Wei Huang

Chih-An Yang

A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.

Semiconductor device structure and methods of forming the same

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Kaohsiung, Taiwan

Hung-Wei Ho