Macronix International Co., Ltd.

Himax Technologies, Inc.

Hung-Sui Lin

Tao-Cheng Lu

Han-Chao Lai

Tao Cheng Lu

Han Chao Lai

Nian-Kai Zous

Mao-Hsiung Lin

Kent Kuohua Chang

Tso-Hung Fan

Yen-Hung Yeh

Chung-Ming Huang

Shih-Keng Cho

Kwang Yang Chan

Mu Yi Liu

Tieh-Yen Chang

Nian Kai Zous

A metal-insulation-metal (MIM) device including a first metal layer, a first insulation layer, a second metal layer, and a second insulation layer is provided. The first insulation layer is disposed on the first metal layer. The second metal layer is disposed on a part of the first insulation layer. The second insulation layer is disposed on a side wall of the second metal layer and on another part of the first insulation layer. A width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a with of the second metal layer parallel to the first metal layer.

Metal-insulation-metal device

A metal-insulation-metal (MIM) device including a first metal layer, a first insulation layer, a second metal layer, and a second insulation layer is provided. The first insulation layer is disposed on the first metal layer. The second metal layer is disposed on a part of the first insulation layer. The second insulation layer is disposed on a side wall of the second metal layer and on another part of the first insulation layer. A width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a with of the second metal layer parallel to the first metal layer. A manufacture method of an MIM device is also provided.

An electrical-overstress (EOS) protection circuit for an electronic device includes series-connected resistors, a mode-control switch, and a bias circuit. The series-connected resistors are electrically coupled between an input and an output, and the mode-control switch is electrically coupled between the output and a ground. The bias circuit is electrically coupled to the input for generating a mode-control signal to control the mode-control switch. The bias circuit generates the mode-control signal in a way such that the mode-control switch is open in a normal mode and closed in an EOS mode.

Electrical-overstress protection circuit for an integrated circuit

A method for fabricating a non-volatile memory having a P-type floating gate is described. A tunneling layer is formed on a substrate and then a first patterned polysilicon layer is formed on the tunneling layer. A buried drain is formed in the substrate beside the first polysilicon layer and then an insulating structure is formed on the tunneling layer on the buried drain. Thereafter, a second polysilicon layer is formed on the first polysilicon layer to constitute a floating gate together with the first polysilicon layer. A P-type ion is implanted into the second polysilicon layer and then a dielectric layer and a control gate are sequentially formed on the floating gate. A thermal process is then performed to make the P-type, ion in the second polysilicon layer diffuse into the first polysilicon layer.

Method for fabricating non-volatile memory having P-type floating gate

A transistor device that includes at least two transistors, each transistor including a source region, a drain region, and a shallow trench isolation formed between and contiguous with the source and drain regions, wherein the shallow trench isolation electrically isolates the source and drain regions to minimize the short-channel effects, a conductor layer disposed over the source region, shallow trench isolation, and drain region, wherein the conductor layer electrically connects the source and drain regions to serve as a channel region, a gate oxide disposed over the conductor layer, and a gate structure formed over the gate oxide.

Semiconductor device with minimal short-channel effects and low bit-line resistance

A method for operating a P-channel SONOS memory device that has a charge trapping layer located on a substrate, a gate electrode located on the trapping layer, two doped regions located in the substrate at each side of the charge trapping layer. The two doped regions are set to be a drain region and a source region. When a programming action is intended, the gate electrode and the drain region are applied with a first negative high-level bias, and the source region and the substrate are applied with a grounded voltage. When an erasing action is intended, the gate electrode is a second negative bias which is smaller than the first negative voltage in absolute value. In the mean time, the drain region is applied with the third negative bias and the substrate is applied with a grounded voltage. The third negative voltage is larger than the second negative bias in absolute value.

Operation method for programming and erasing a data in a P-channel sonos memory cell

An erasing method for a p-channel nitride read only memory. The method is used for a p-channel nitride read only memory having charges stored in a charge-trapping layer. A positive voltage is applied to the control gate and a negative voltage to the drain; also, the source is floating and the n-well is grounded. The voltage difference between the positive voltage applied to the control gate and the negative voltage to the drain is sufficient to trigger a band-to-band induced hot electron injection to erase the p-channel nitride read only memory.

Erasing method for p-channel NROM

A semiconductor device with trench isolation structure is disclosed. The invention uses a trench isolation structure that can be formed by using conventional methods to prevent problems such as drain induced barrier lowering (DIBL), punch-through leakage and spiking leakage. Thus these poor electrical properties of the conventional semiconductor device with a shallow junction depth resulting from the shrink of design rules can be solved.

Semiconductor device with trench isolation structure

A method for fabricating a non-volatile memory is described. A planar doped region is formed in the substrate at first. A mask layer and a patterned photoresist layer are sequentially formed on the substrate. A plurality of trenches is formed in the substrate with the patterned photoresist layer as a mask to divide the planar doped region into a plurality of bit-lines. The patterned photoresist layer is removed and then a recovering process is performed to recover the side-walls and the bottoms of the trenches from the damages caused by the trench etching step; The mask layer is removed. A dielectric layer is formed on the substrate and then a plurality of word-lines is formed on the dielectric layer.

Non-volatile memory and fabrication thereof

A method for manufacturing a metal oxide semiconductor device is provided comprising the steps of: performing an ion implantation to form a source/drain region in the substrate having a gate formed on it and a spacer formed on the sidewalls of the gate; forming a self-aligned silicide layer on the exposed surface of the gate and the source/drain region; removing a portion of the spacer to form a substantially triangular spacer with sharp corners; performing a tilted pocket implantation to form pocket regions within the substrate beside the gate, and controlling the location of the pocket regions and the dopant distribution by adjusting the energy and angle of the tilted pocket implantation; performing a tilted-angle implantation to form a source/drain extension within the substrate beside the gate and underlying the spacer; using the thermal cycle process to adjust the junction depth and the doping profile of the source/drain extension.

Method for manufacturing a metal oxide semiconductor with a sharp corner spacer

A method of fabricating a non-volatile memory, in which a charge-trapping layer consisting of insulating materials and bar-like conductive layers to be patterned into the gates are formed at first. The buried bit-lines are formed in the substrate between the bar-like conductive layers. Each of the buried bit-lines extends into the substrate under a portion of an adjacent high-K spacer, but not to the substrate under an adjacent bar-like conductive layer. High-K spacers are formed on the side-walls of the bar-like conductive layers. Then the bar-like conductive layers are patterned into the gates, and word-lines are formed on the substrate to electrically connect with the gates. The material of the high-K spacer has a dielectric constant and the high-K spacer has a width, such that a channel will extend to the substrate under the high-K spacer and connect with the buried bit-line when the non-volatile memory is operated.

Method of fabricating a non-volatile memory with a spacer

The present invention provides a method for fabricating a semiconductor device that can be applied in system on chip (SOC), comprising: providing a substrate with a memory cell region and a peripheral circuit region; forming a plurality of bit-lines in the memory cell region; forming a first and a second dielectric layers respectively in the memory cell region and the peripheral circuit region; and forming a plurality of gates. Next, a blanket ion implantation step is performed to form a plurality of P type LDDs in the substrate besides the gates in a PMOS device region within the peripheral circuit region, without forming an anti-punch through region in the substrate of the memory cell region. Afterwards, a plurality of spacers are formed, connected to one another. An ion implantation step is performed to form a plurality of P type source/drain regions.

Method for fabricating semiconductor device applied system on chip

A nitride read only memory device that includes a substrate having a source region, a drain region, and a channel region formed therebetween, a first oxide layer formed over the channel region, a nitride layer formed over the first oxide layer, a second oxide layer formed over the nitride layer, a gate structure formed over the second oxide layer, wherein a region in the substrate underneath the gate structure excludes one of the source and drain regions, a plurality of sidewall spacers formed over the nitride layer and contiguous with the gate structure, and at least one injection point for injecting electrons into the nitride layer, wherein the injection point is located at a junction between the channel region and one of the source and drain regions, and wherein electron charges are stored in portions of the nitride layer underneath the sidewall spacers.

SONOS component having high dielectric property

A method for forming extension by using double etch spacer. The method includes at least the following steps. First a semiconductor substrate is provided. Then, the gate is formed on the substrate. A first spacer is formed on a sidewall of the gate. Then, numerous first ions are implanted in the substrate by a mask of both the gate and the first spacer to form the source/drain region. Then, the second spacer is formed by etching the first spacer, wherein the width of the second spacer is less than the width of the first spacer. Finally, numerous second ions are implanted in the substrate by a mask of both the gate and the second spacer to form an extension.

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Hsin-Ying, Taiwan

Hung-Sui Lin