Innolux Corporation

Hung-Sheng Chou

Cheng-Chi Wang

Wen-Hsiang Liao

Kuo-Jung Fan

Heng-Shen Yeh

Yeong-E Chen

Cheng-En Cheng

A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.

Redistribution layer structure

A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

A manufacturing method of a semiconductor package is provided. The manufacturing method includes the following. A plurality of semiconductor components are provided. Each semiconductor component has at least one conductive bump. A substrate is provided. The substrate has a plurality of conductive pads. A transfer device is provided. The transfer device transfers the semiconductor components onto the substrate. A heating device is provided. The heating device heats or pressurizes at least two semiconductor components. During transferring of the semiconductor components to the substrate, the at least one conductive bump of each semiconductor component is docked to a corresponding one of the conductive pads.

Growing community of inventors

Miao-Li County, Taiwan

Hung-Sheng Chou