Sino-american Silicon Products Inc.

Sino-american Sulicon Products Inc.

Hung-Sheng Chou

Wen-Huai Yu

Wen-Ching Hsu

Yu-Min Yang

I-Ching Li

Chung-Wen Lan

Sung-Lin Hsu

Chun-I Fan

Yu-Tsung Chiang

Ming-Kung Hsiao

Bruce Hsu

Sung Lin Hsu

Kuo-Wei Chuang

Yu-Ting Wong

Li Wei Li

Wen Ching Hsu

Present disclosure provides a multicrystalline silicon (mc-Si) brick, including a bottom portion starting from a bottom to a height of 100 mm, a middle portion starting from the height of 100 mm to a height of 200 mm; and a top portion starting from the height of 200 mm to a top. A percentage of incoherent grain boundary in the bottom portion is greater than a percentage of incoherent grain boundary in the top portion. Present disclosure also provides a multicrystalline silicon (mc-Si) wafer. The mc-Si wafer includes a percentage of non-&#x3a3; grain boundary from about 60 to about 75 and a percentage of &#x3a3;3 grain boundary from about 12 to about 25.

Multicrystalline silicon brick and silicon wafer therefrom

The invention provides a crucible assembly and method of manufacturing a crystalline silicon ingot by use of such crucible assembly. The crucible assembly of the invention includes a crucible body and a fiber textile article. The fiber textile article is made of a plurality of carbon fibers, and is loaded on a bottom of the crucible body. The fiber textile article has a plurality of intrinsic pores randomly arranged.

Crucible assembly and method of manufacturing crystalline silicon ingot by use of such crucible assembly

A method for manufacturing an isolating layer onto a crucible includes the steps as follows: providing a spraying device for the following spraying steps; heating the crucible and measuring the heated crucible to get a first temperature; spraying a slurry on the inner wall of the crucible to form an isolating layer by a spraying unit with a predetermined spraying manner; measuring the isolating layer to get a second temperature; obtaining a value for the difference between the first and second temperatures and judging whether the difference value in a within predetermined difference scope or not, in which the predetermined difference scope is about 6&#xb0; C.&#x2dc;12&#xb0; C.; when the difference value is not in the predetermined difference scope, adjusting the predetermined spraying manner; when the difference value is in the predetermined difference scope, implementing the above spraying steps to the crucible.

Method for manufacturing isolating layer onto crucible and spraying device related thereto

The invention discloses a seed used for crystalline silicon ingot casting. A seed according to a preferred embodiment of the invention includes a crystal and an impurity diffusion-resistant layer. The crystal is constituted by at least one grain. The impurity diffusion-resistant layer is formed to overlay an outer surface of the crystal. A crystalline silicon ingot fabricated by use of the seed of the invention has significantly reduced red zone and yellow zone.

Seed used for crystalline silicon ingot casting

Growing community of inventors

Hsinchu, Taiwan

Hung-Sheng Chou