Hong Kong Applied Science and Technology Research Institute Company, Limited

Cyntec Company

Hung-Shen Chu

Jian Feng

Shengmei Zheng

Yong Cai

Ching-Chao Wang

Kuo-An Chiu

Yan Huang

Hua-Jun Peng

Yu Lin

The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.

Method of super flat chemical mechanical polishing technology and semiconductor elements produced thereof

A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

Light emitting diode device, method of fabrication and use thereof

A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

Semiconductor device having current spreading layer

A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

Semiconductor light emitting device

A structural configuration and manufacture method is applied to manufacture electronic circuits on a ceramic substrate including capacitor and inductors for filters. The electronic circuits have strong bonding to securely adhere to the SOG-coated substrate when the SOG is cured at an elevated temperature supplemented with high nitrogen flow during the curing process. The SOG coated ceramic substrate shows excellent layer compatibilities during temperature variations because reduced differences of thermal coefficients between different layers.

Growing community of inventors

Hsinchu, Taiwan

Hung-Shen Chu