Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-San Lu

Yung-Hsiang Chen

Yu-Lung Yeh

Szu-Hung Yang

Che-Min Lin

Chao-Lung Chen

Chuang Chihchous

Ting-Ying Wu

Chao Yuan Chang

Chin-Hsin Hsiao

Wen-Chun Hou

Chun-An Kung

Ping-Ching Jiang

A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Plating apparatus and method for electroplating wafer

A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Plating membrane

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Tainan, Taiwan

Hung-San Lu