Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung Pin Chen

Ru-Shang Hsiao

Chi-Cherng Jeng

Chii-Ming M Wu

Ling-Sung Wang

Sen-Hong Syue

Chih-Kang Chao

Chih-Fu Chang

Wei-Barn Chen

A method of fabricating a FinFET includes at last the following steps. A &#x3c;551&#x3e; direction is determined by tilting 8.05&#xb1;2 degrees from a normal vector of a (110) lattice plane of a semiconductor substrate. The semiconductor substrate is patterned along a lattice plane perpendicular to the &#x3c;551&#x3e; direction, so as to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin having sidewalls disposed on a (551) lattice plane. Insulators are in the trenches. A gate stack is formed over portions of the semiconductor fin and over portions of the insulators. Strained material portions are formed over the semiconductor fins revealed by the gate stack.

Fin field effect transistor and method for fabricating the same

As will be appreciated in more detail herein, the present disclosure provides for FinFET techniques whereby a FinFET channel region has a particular orientation with respect to the crystalline lattice of the semiconductor device to provide enhanced mobility, compared to conventional FinFETs. In particular, the present disclosure provides FinFETs with a channel region whose lattice includes silicon atoms arranged on (551) lattice plane. In this configuration, the sidewalls of the channel region are particularly smooth at the atomic level, which tends to promote higher carrier mobility and higher device performance than previously achievable.

N/P MOS FinFET performance enhancement by specific orientation surface

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Kaohsiung, Taiwan

Hung Pin Chen