Leland Stanford Junior University

Sensys Instruments Corporation

The United States Government As Represented by the Department of Veterans Affairs

Hung Pham

Fred E Stanke

Colin Woon

James Chang

Butrus Thomas Khuri-Yakub

Talat Fatima Hasan

Anais Legrand

Simon Farnebo

Fahrettin Levent Degertekin

B T Khuri-Yakub

The invention provides an injectable composition and method for the minimally invasive, in-situ repair and regeneration of an injured ligament or tendon in a mammalian subject. The composition is also useful for the delivery of growth factors, therapeutic agents and cells into the area of tendon or ligament injury.

Injectable composition for in-situ repair and regeneration of an injured ligament or tendon and methods of use

Provided are methods for treating a musculoskeletal tissue interface injury using decellularized, allogeneic or xenogeneic composite tissue bioscaffolds.

Methods of treating a musculoskeletal tissue interface injury using decellularized composite tissue bioscaffolds

One aspect of the present invention is a method of producing a decellularized composite tissue bioscaffold for musculoskeletal tissue interface reconstruction by physicochemically treating a musculoskeletal tissue interface isolated from allogeneic sources. In certain embodiments, such musculoskeletal tissue interfaces can also be isolated from xenogeneic sources. The method comprises treatment of the interface with detergents, chemical oxidants and ultrasonic energy, and wash steps in between to remove residual detergents as well as oxidants. The resulting bioscaffold may be freeze-dried or lyophilized, sterilized and aseptically packaged for subsequent use.

Decellularized composite tissue bioscaffolds for musculoskeletal tissue interface reconstruction and methods of production

An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

Apparatus and method for characterizing semiconductor wafers during processing

Apparatus and method for characterizing semiconductor wafers during

A system is disclosed that employs ultrasonic waves to perform in-situ measurements to determine the properties of films deposited on substrates in the course of various semiconductor or processing steps. In one embodiment a single transducer excites incident acoustic waves at multiple frequencies that reflect from the films. The reflected waves are received by the same transducer. An analysis system determines the phase shift of the received reflected waves and, based on the phase shift, determines the film properties. Other embodiments employ distinct source and receiving transducers. Embodiments are also disclosed that compensate the measured phase shift for temperature variations in the substrate. In one such system, temperature compensation is performed based on the processing of phase measurements made at multiple frequencies or incidence angles or with multiple ultrasonic modes. The disclosed techniques are equally applicable to determining the degree of erosion of chamber members.

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Milpitas, CA, United States of America

Hung Pham