Sony Semiconductor Solutions Corporation

Hung Luong

Akihiko Kato

Chihiro Okada

A solid-state image sensor includes a pixel array section including a plurality of unit pixels each having a photoelectric conversion unit, the plurality of unit pixels being arranged in a matrix, a constant current source circuit unit having a constant current source connected to each of vertical signal lines provided in association with column arrangement of the pixel array section; and a control unit configured to control the constant current source circuit unit. The constant current source includes a plurality of transistors. The control unit switches, in a case where the plurality of transistors constituting the constant current source is regarded as one transistor having a gate width and a gate length being equivalent to each other, a ratio between the gate width and the gate length of the plurality of transistors on the basis of illumination in image-capturing environment.

Solid-state image sensor, method of driving solid-state image sensor, and electronic apparatus

To improve an SN ratio in a solid-state imaging element provided with a capacitance for reducing a noise component. A first capacitance connection circuit connects one end of a first capacitance to a first signal line in a case where a first pixel signal is transmitted via the first signal line. A second capacitance connection circuit connects one end of a second capacitance to a second signal line in a case where a second pixel signal is transmitted via the second signal line. An intercapacitance connection circuit connects one end of each of the first capacitance and the second capacitance in a case where one of the first pixel signal and the second pixel signal is transmitted, and disconnects one end of each of the first capacitance and the second capacitance in a case where both the first pixel signal and the second pixel signal are transmitted.

Solid-state imaging element, imaging apparatus, and method for controlling solid-state imaging element

The present technology relates to an image pickup device and an electronic device that enables a reduction in influence exerted by a dark current. The image pickup device and the electronic device include a sample and hold unit configured to perform sampling and holding of a pixel signal, an analog digital (AD) conversion unit configured to perform AD conversion of the pixel signal that includes a digit after a decimal point, a digital gain processing unit configured to apply a predetermined gain to a digital signal from the AD conversion unit, and a gain setting unit configured to set an analog gain of a column unit including the sample and hold unit and the AD conversion unit. The gain setting unit sets the analog gain in accordance with a measured dark current amount. The present technology can be applied, for example, to a CMOS image sensor.

Image pickup device and electronic device

A solid-state image pickup element according to the present disclosure includes an analog circuit unit that performs reading of a pixel signal from a unit pixel and to perform A/D conversion processing, a digital circuit unit that performs signal output processing of outputting pixel data after the A/D conversion processing, in parallel with the reading of the pixel signal and the A/D conversion processing, and a control unit that causes the digital circuit unit to perform the processing over a period from a processing start timing to a processing finish timing in the analog circuit unit, while the control unit is controlling a speed of a clock being a criterion for an operation of the digital circuit unit.

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Kanagawa, Japan

Hung Luong