United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Hung-Jung Yan

Chiu-Hsien Yeh

Chien-Cheng Tsai

Hui-Ling Chuang

Chih-Chi Cheng

Wan-Chi Wu

A manufacturing method of an epitaxial contact structure in a semiconductor memory device includes the following steps. A recess is formed in a semiconductor substrate by an etching process. An etching defect is formed in the recess by the etching process. An oxidation process is performed after the etching process. An oxide layer is formed in the recess by the oxidation process, and the etching defect is encompassed by the oxide layer. A cleaning process is performed after the oxidation process. The oxide layer and the etching defect encompassed by the oxide layer are removed by the cleaning process. An epitaxial growth process is performed to form an epitaxial contact structure in the recess after the cleaning process.

Growing community of inventors

Penghu County, Taiwan

Hung-Jung Yan