Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-Ju Li

Kuo-Ching Huang

Yu-Wei Ting

Kuo-Pin Chang

Wei Ting Hsieh

Kuo-pin Chang

Ching-En Chen

A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a second contact electrode located on the first heater line. The second PCM switch includes a second heater line, a second PCM line, and a third contact electrode and a fourth contact electrode located on the second heater line. The second contact electrode is electrically connected to the third contact electrode. The fourth contact electrode is electrically grounded. One of the first contact electrode and the second contact electrode includes an radio-frequency (RF) signal input port. Another of the first contact electrode and the second contact electrode comprises an RF signal output port. The device structure may function as a combination PCM switch that decreases noise level during signal transmission.

Phase change material switch circuit for enhanced signal isolation and methods of forming the same

One embodiment of the present disclosure provides an optical device which includes a waveguide and a light modulator. The light modulator comprising a bridge segment positioned on the waveguide, wherein the bridge segment comprises a phase-change material. The optical device also includes a heating member. The heating member includes an intermediate segment and two electric contact segments. The intermediate segment is in direct contact with the bridge segment of the light modulator. The two electric contact segments are connected to two ends of the intermediate segment, wherein heat produced from the heating member is directly transferred to the bridge segment of the light modulator thereby inducing a phase transition thereof.

Optical device with phase-change materials and method of fabricating the same

A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Selector for memory device

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.

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Hsinchu, Taiwan

Hung-Ju Li