Playnitride Display Co., Ltd.

Hung-Hsuan Wang

Tzu-Yang Lin

Fei-Hong Chen

Pai-Yang Tsai

Yun-Syuan Chou

Chee-Yun Low

A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Growing community of inventors

MiaoLi County, Taiwan

Hung-Hsuan Wang