National Taiwan University

Hung-Hsin Chen

Si-Chen Lee

Chun-Han Chen

Shih-Yen Chen

Yu-Wei Jiang

Fang-Tzu Chuang

Shi-Ming Lin

Shang-Ru Tsai

A gas detection system comprising a case having a hollow chamber, a gas input port, a gas output port, a radiation emitting device, and a photo detector. The gas input port may be disposed on the case for a test gas flowing into the chamber. The gas output port may be disposed on the case for the test gas flowing out of the chamber. The radiation emitting device may be disposed on the case and operated in a surface plasmonic mode or a waveguide mode for emitting a narrow bandwidth thermal radiation light source with multi-peak wavelengths into the chamber, wherein the multi-peak wavelengths may comprise a first absorption wavelength and a second absorption wavelength of the test gas. The photo detector may be disposed on the case for detecting light intensity of the light source passing through the chamber to determine the concentration of the test gas.

Gas detection system and radiation emitting device for the gas detection system

A photo detector is disclosed. The photo detector comprises a substrate, a flat metal layer, a dielectric layer, a patterned metal layer, and a semiconductor film. The flat metal layer is formed on the substrate. The dielectric layer is formed on the flat metal layer. The patterned metal layer is formed on the dielectric layer. The patterned metal layer comprises a first interdigitated electrode and a second interdigitated electrode. The first interdigitated electrode is adjacent to the second interdigitated electrode. The semiconductor film is formed on the dielectric layer and covering the first interdigitated electrode and the second interdigitated electrode. When the semiconductor film receives an incident light, the flat metal layer and the patterned metal layer are operated in a localized surface plasmon mode or a waveguide mode for absorbing a certain narrow bandwidth radiation light of the incident light. Therefore, the electrical conductivity of the semiconductor film is changed and the optical energy absorbed by the photo detector is determined.

Photo detector

A method of fabricating a polarized color filter wherein a transparent substrate is provided and coated with a photoresist layer. A wave-shaped mask may then be prepared and a periodic wave-shaped surface may be placed in contact with the photoresist layer, treating the photoresist layer with a primary exposure process. An external force may be applied to the wave-shaped mask, and the transparent substrate or wave-shaped mask by be rotated by a predetermined degree. The photoresist layer may be treated with a secondary exposure process, wherein the photoresist layer is developed in order to obtain a photoresist pattern layer. A metal layer may be coated on the transparent substrate with the photoresist pattern layer. The photoresist pattern layer and the portion of the metal layer on the photoresist pattern layer may then be removed such that the remaining metal layer forms a periodic hole substrate.

Method of fabricating a polarized color filter

Growing community of inventors

Taipei, Taiwan

Hung-Hsin Chen