Taiwan Semiconductor Manufacturing Comp. Ltd.

Richtek Technology Corporation

Richtek Technology Corporation, R.o.c

Other

Richtek Technology Company Ltd

Hung-Der Su

Jing-Meng Liu

Jong Chen

Di-Son Kuo

Tsung-Yi Huang

Jian-Hsing Lee

Ching-Yao Yang

Huan-Ping Chu

Chrong Jung Lin

Wen-Ting Chu

Chrong-Jung Lin

Liang-Pin Tai

Chung-Lung Pai

An-Tung Chen

Chien-Wei Chiu

Chia-Ta Hsieh

Yai-Fen Lin

Yu-Lin Yang

Shien-Yang Wu

Yung-Shun Chen

Chun-Yen Huang

Yi-Hsu Wu

Boon-Khim Liew

Tzu-Cheng Kao

Jin-Lian Su

Pao-Chuan Lin

Wen-Yi Liao

Chun-Hao Chang

Min-Da Wu

Da-Hong Qian

Kuo-Cheng Chang

Carlos H Diaz

Hung-Cheng Sung

Jiaw-Ren Shih

Yuan-Hung Chiu

Sun-Jay Chang

Tsung-Chieh Hsiao

Wei-Hsin Wei

Chih-Fang Huang

Li-Wen Fang

Ting-Hua Hsieh

Ting-Fu Chang

Shih-Hui Chen

Tsung-Yu Yang

Tung-Heng Shie

Ya-Hsien Liu

Po-Chin Peng

Chiang-Yung Ku

Kuan-Yao Wang

K C Chang

Yang-Ping Hung

Chrong-Jong Lin

The invention provides a bio-detection device, including a carrier, a plurality of spacers, an electronic circuit, and a package layer, wherein an open platform is formed. The carrier includes a test region and a signal transmission wiring, wherein the test region is configured to carry a fluid under test. The spacers are located on the test region and electrically connected to two different voltage levels to form a capacitor for sensing a capacitance of the fluid. The spacers are connected to the signal transmission wiring. The electronic circuit receives and processes a sensing signal corresponding to the capacitance of the fluid. The package layer covers a portion of the carrier but does not cover the test region. The open platform is formed whereby a user can easily put in the fluid. The open platform has a bottom which includes the test region, and an area of the open platform is defined by the spacers and the package layer.

Bio-detection device and manufacturing method thereof

The present invention discloses a high voltage metal oxide semiconductor (HVMOS) device and a method for making same. The high voltage metal oxide semiconductor device comprises: a substrate; a gate structure on the substrate; a well in the substrate, the well defining a device region from top view; a first drift region in the well; a source in the well; a drain in the first drift region, the drain being separated from the gate structure by a part of the first drift region; and a P-type dopant region not covering all the device region, wherein the P-type dopant region is formed by implanting a P-type dopant for enhancing the breakdown voltage of the HVMOS device (for N-type HVMOS device) or reducing the ON resistance of the HVMOS device (for P-type HVMOS device).

High voltage metal oxide semiconductor device and method for making same

The present invention discloses a semiconductor composite film with a heterojunction and a manufacturing method thereof. The semiconductor composite film includes: a semiconductor substrate; and a semiconductor epitaxial layer, which is formed on the semiconductor substrate, and it has a first surface and a second surface opposite to each other, wherein the heterojunction is formed between the first surface and the semiconductor substrate, and wherein the semiconductor epitaxial layer further includes at least one recess, which is formed by etching the semiconductor epitaxial layer from the second surface toward the first surface. The recess is for mitigating a strain in the semiconductor composite film.

Semiconductor composite film with heterojunction and manufacturing method thereof

The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Lateral double diffused metal oxide semiconductor device and manufacturing method thereof

The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.

Double diffused metal oxide semiconductor device and manufacturing method thereof

The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.

High electron mobility transistor and manufacturing method thereof

The present invention discloses an LDMOS device having an increased punch-through voltage and a method for making same. The LDMOS device includes: a substrate; a well of a first conductive type formed in the substrate; an isolation region formed in the substrate; a body region of a second conductive type in the well; a source in the body region; a drain in the well; a gate structure on the substrate; and a first conductive type dopant region beneath the body region, for increasing a punch-through voltage.

LDMOS device having increased punch-through voltage and method for making same

The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

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Luju, Taiwan

Hung-Der Su