Lextar Electronics Corporation

Hung-Chun Tong

Yu-Chun Lee

Tzong-Liang Tsai

Hung-Chia Wang

Fu-Hsin Chen

Ru-Shi Liu

Ching-Yi Chen

Yi-Ting Tsai

Chia-Chun Hsieh

Chang-Zhi Zhong

Wen-Wan Tai

An-Cih Tang

Shin-Ying Lin

Xue-Jie Zhang

Li-Cheng Yang

Zhen Bao

Yu-Jui Tseng

Kiet Tuong Ly

A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Method of manufacturing display device

The wavelength conversion material includes a general formula (I) MABCDE:ESREand satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.

Wavelength conversion material, method of manufacturing thereof and light emitting device

A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of T&#xdc;V Rheinland and more than 90% of wide color gamut.

Light-emitting diode device

Display device and manufacturing method thereof

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q) does not connect with any siloxy group, and the silicon atom of the first configuration (Q) connects with one siloxy group, and the silicon atom of the second configuration (Q) connects with two siloxy groups, and the silicon atom of the third configuration (Q) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Wavelength converting material, and light emitting device

A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Light-emitting package structure

A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Low blue light backlight module

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q(0Al), first configuration Q(1Al), second configuration Q(2Al), third configuration Q(3Al), and fourth configuration Q(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Wavelength converting material and light emitting device

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClBrI), wherein 0&#x2264;a&#x2264;1, 0&#x2264;b&#x2264;1.

Application of quantum dot composite material

A perovskite luminescent nanocrystal has a chemical formula represented by: CsBX, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the CsBXperovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the CsBXperovskite luminescent nanocrystal is greater than 1 and less than 4.

Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal

A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.

Light emitting diode device and manufacturing method thereof

Quantum dot composite material and manufacturing method and application thereof

The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material layer. The blue light source has a light emitting surface. The first fluorescent material layer covers the light emitting surface of the blue light source. The first fluorescent material layer consists of a first fluorescent material. An excitation band of the first fluorescent material is in a blue wave band, and an emission band of the first fluorescent material is in a green wave band. The second fluorescent material layer covers the first fluorescent material layer. The second fluorescent material layer consists of a second fluorescent material. An excitation band of the second fluorescent material is in a green wave band, and an emission band of the second fluorescent material is in a red wave band. A light device and a backlight module are also provided herein.

Light emitting structure, light device and backlight module

A light emitting diode (LED) package includes a light element, a light transferring layer disposed on the light element, a packaging layer enclosing the light transferring layer, a white wall surrounding the packaging layer and a diffusion film disposed on the packaging layer. The light transferring layer has a light outlet face, a light inlet face opposite to the light outlet face and a peripheral side. The light inlet face faces the light element. The white wall surrounds the peripheral side that is enclosed by the packaging layer.

Growing community of inventors

Hsinchu, Taiwan

Hung-Chun Tong