Epistar Corporation

Hung-Chih Yang

Min-Hsun Hsieh

Chen Ou

Hsin-Mao Liu

Ta-Cheng Hsu

Wei-Han Wang

Yu-Jiun Shen

Shih-Pang Chang

Chi-Ling Lee

Chi-Hung Wu

Yi-Lin Guo

Hui-Tang Shen

A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 &#x3bc;m; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.

Light-emitting device manufacturing method

Disclosed is a light-emitting device, comprising: a first multi-quantum well structure comprising a plurality of first well layers and a first barrier layer stacked alternately, wherein the energy gap of the first barrier layer is larger than that of any one of the first well layers; a second multi-quantum well structure comprising a plurality of second well layers and a second barrier layer stacked alternately, wherein the energy gap of the second barrier layer is larger than that of any one of the second well layers; and a third barrier layer disposed between the first multi-quantum well structure and the second multi-quantum well structure, and the third barrier layer connected with the first well layer and the second well layer, wherein the energy gap of the third barrier layer is larger than that of any one of the first well layers and the second well layers, and the thickness of the third barrier layer is larger than that of any one of the first barrier layer and the second barrier layer.

Light-emitting device

The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.

Growing community of inventors

Hsinchu, Taiwan

Hung-Chih Yang