Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

Hung-Chih Chen

Szu-Wei Lu

Chin-Chuan Chang

Yi-Chao Mao

Kun-Tong Tsai

Chen-Cheng Kuo

Shih-Shiung Chen

Ho-Ku Lan

Ren-Jyh Leu

Chiao-Kun Yu

Chao-Hsiung Wang

Tzu-Yu Lin

Chih-Chien Hung

Tai-Yuan Wu

Chih-Shun Fan

Hsien-Wei Chin

Kun-I Lee

Bao Ru Young

Yao-Chanet Chu

Chia-Hsiu Huang

Niahn-Mauh Shih

Kun I Lee

An integrated circuit structure is provided. The integrated circuit structure includes a die that contains a substrate, an interconnection structure, active connectors and dummy connectors. The interconnection structure is disposed over the substrate. The active connectors and the dummy connectors are disposed over the interconnection structure. The active connectors are electrically connected to the interconnection structure, and the dummy connectors are electrically insulated from the interconnection structure.

Integrated circuit structure, and method for forming thereof

A back plate for use with a backlight module, a backlight module using the same, and the manufacturing method thereof are provided. The back plate includes a plate body and a side wall. The side wall extends out from the edge of the plate body and includes a wall body and a bending part, wherein the thickness of the wall body is less or equal to 0.12 mm. The bending part is formed by bending a plurality of bending sheets outward from the top of the wall body, wherein the thickness of each bending sheet is less or equal to 0.12 mm. The backlight module includes the back plate and a light source module, wherein the light source module is disposed on the plate body and adjacent to the inner side of the side wall.

Back plate for use with a backlight module, a backlight module using the same, and the manufacturing method thereof

A backlight module includes a bezel, a supporting frame, and a light source module. The bezel includes a back plate and a side wall connected to an edge of the back plate; the supporting frame includes a lower frame body and an upper frame body extending from a top of the lower frame body, wherein the lower frame body is disposed on the back plate and surrounded by the side wall. The upper frame body has at least a portion laterally shifted relative to the lower frame body to be located over the side wall. The light source module is surrounded by the lower frame body, wherein the portion of the upper frame body located over the side wall encloses a panel accommodation space above a top of the light source module. A display device includes the above-mentioned backlight module and a display panel disposed in the panel accommodation space.

Slim border design of display device and backlight module thereof

A dual display module is provided. The dual display module comprises a common circuit board, a first display panel and a second display panel. The common circuit board has a first surface and a second surface. The first display panel and the second display panel are respectively set up on the first surface and the second surface. At least one of the display panels is directly attached to the common circuit board through a connecting interface. The dual display module has a lower manufacturing cost and provides a better yield.

Dual display module

Detecting decay of equipment lens anti-reflective coating (ARC) by detecting undesired residue is disclosed. The undesired residue detected correlates with the decay of the ARC, where a greater amount of undesired residue detected indicates a greater level of the decay. The undesired residue is detected due to stray light reflected by the ARC because of its decay. In the context of semiconductor fabrication equipment, photoresist residue results from negative photoresist on a semiconductor wafer, and may be viewed on one or more scribe lines of a mask within a field of view of the lens of the semiconductor fabrication equipment.

Detection of lens anti-reflective coating decay by undesired residue detection

This invention discloses a novel design to obtain a good coating uniformity and to reduce the volume of viscous materials when coating by spraying the viscous material on the wafer during the first time period at a first predetermined pressures; spraying the viscous material on the wafer at a second predetermined pressure in response to the end of the first time period, the second predetermined pressure being lower than the first predetermined pressure; and spraying the viscous material on the wafer during a second time period at a time-varying pressure, the time-varying pressure being increased from the second predetermined pressure to a third predetermined pressure during the second time period.

Method and system for spraying a viscous material on a wafer

Correction of overlay shift of an epitaxial silicon layer deposited on a semiconductor wafer, and of post-epitaxial silicon layers subsequently deposited, is disclosed. When an epitaxial silicon layer of a given thickness is deposited, the zero mark coordinates for the deposition are shifted relative to alignment marks on the wafer by a distance based on the thickness of the layer. The distance is preferably proportional to the thickness of the epi layer. This prevents overlay shift of the epi layer. For post-epitaxial silicon layers subsequently deposited, preferably except for the first post-epi layer, a clear out process is initially performed to maintain the alignment marks on the semiconductor wafer. In this way, overlay shift, or misalignment, of the post-epi layers is also prevented.

Overlay shift correction for the deposition of epitaxial silicon layer and post-epitaxial silicon layers in a semiconductor device

An apparatus and method for determining local de-focus problems on a real time basis in a wafer exposure system. The distance of a wafer from an objective lens and rotation of the wafer about two orthogonal axis at each field position is adjusted to achieve optimum focus for each field of the wafer. The rotational data is fed to a computer and analyzed to determine if any of the rotational angles or if the difference between individual rotational angle and the mean rotational angle exceed critical angles. If any of the critical angles are exceeded local de-focus will occur and the exposure system must be checked for defects. If none of the critical angles are exceeded processing continues with the next wafer. The comparison of the rotational angles to the critical angles is performed for each wafer before continuing with the next wafer so that problems are discovered on a real time basis.

Real time local defocus monitor system using maximum and mean angles of

The present invention discloses a liquid dispensing system and a method for dispensing liquid that includes two hermetically sealed tanks each having a liquid container with a conduit pipe connecting the two containers. A differential pressure exists between the two tanks such that a process liquid can be fed from the second container into a dispensing nozzle under the differential pressure and the gravity of the liquid without the need of a pumping system. The problems of gel formation normally observed in conventional dispensing systems can be eliminated. A high viscosity, short shelf life liquid can be most suitably dispensed by the present invention novel dispensing system and method.

Liquid dispensing system and method for dispensing

The present invention discloses a method for coating a polyimide precursor on an electronic structure incorporating the use of a silicon coupling agent without any bubble defect in the film deposited. The method can be carried out by flowing at least one inert gas through a deposition chamber and thereby keeping the relative humidity in the chamber at below 25% to carry away the formation of any water molecules and water vapor to prevent the formation of bubbles in the film deposited.

Growing community of inventors

Hsin-Chu, Taiwan

Hung-Chih Chen