Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Other

Hung-Chih Chang

Chee-Wee Liu

Pin-Shiang Chen

Samuel C Pan

Chih-Sheng Chang

Cheng-Yi Peng

Der-Chuan Lai

A device includes a semiconductor substrate, a buried oxide over the substrate, a first transition metal dichalcogenide layer over the buried oxide, an insulator over the first transition metal dichalcogenide layer, and a second transition metal dichalcogenide layer over the insulator. A gate dielectric is over the second transition metal dichalcogenide layer, and a gate is over the gate dielectric.

Multi-channel field effect transistors using 2D-material

A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is parallel to a [01-10] direction or a [&#x2212;2110] direction of the wurtzite semiconductor. The device further includes a gate dielectric over the wurtzite semiconductor, and a gate electrode over the gate dielectric.

Transistor with wurtzite channel

A semiconductor device and a method of manufacture are provided. A substrate has a dielectric layer formed thereon. A three-dimensional feature, such as a trench or a fin, is formed in the dielectric layer. A two-dimensional layer, such as a layer (or multilayer) of graphene, transition metal dichalcogenides (TMDs), or boron nitride (BN), is formed over sidewalls of the feature. The two-dimensional layer may also extend along horizontal surfaces, such as along a bottom of the trench or along horizontal surfaces of the dielectric layer extending away from the three-dimensional feature. A gate dielectric layer is formed over the two-dimensional layer and a gate electrode is formed over the gate dielectric layer. Source/drain contacts are electrically coupled to the two-dimensional layer on opposing sides of the gate electrode.

3D UTB transistor using 2D-material channels

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect transistor (FinFET) disposed over a substrate, and a second FinFET device disposed over the first FinFET. A junction isolation material is disposed between a source of the first FinFET and a source of the second FinFET.

Semiconductor devices and manufacturing methods thereof

Semiconductor devices and methods of forming the same are provided. A first gate stack is formed over a substrate, wherein the first gate stack comprises a first ferroelectric layer. A source/channel/drain stack is formed over the first gate stack, wherein the source/channel/drain stack comprises one or more 2D material layers. A second gate stack is formed over the source/channel/drain stack, wherein the second gate stack comprises a second ferroelectric layer.

Field effect transistors and methods of forming same

3D UTB transistor using 2D material channels

An enzyme-containing beverage has various types of enzymes and basically has fermentation fluid obtained form fermented vegetables and fruits and fermented pine extract, and optionally further having fermented extract from a paper-mulberry tree. A method produces the enzyme beverage for fermenting the raw materials (vegetables, fruits, pine extract, and paper-mulberry extract).

Growing community of inventors

Taichung, Taiwan

Hung-Chih Chang