Lextar Electronics Corporation

Taiwan Hopax Chemicals Mfg. Co., Ltd.

Hung-Chia Wang

Tzong-Liang Tsai

Yu-Chun Lee

Hung-Chun Tong

Ru-Shi Liu

Chia-Chun Hsieh

Fu-Hsin Chen

Ching-Yi Chen

Yi-Ting Tsai

An-Cih Tang

Xue-Jie Zhang

Shin-Ying Lin

Li-Jane Her

Chang-Zhi Zhong

Ping-Hung Lin

Wen-Wei Chien

Kiet Tuong Ly

Zhen Bao

Yu-Jui Tseng

Hsin-Yu Tsai

The wavelength conversion material includes a general formula (I) MABCDE:ESREand satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.

Wavelength conversion material, method of manufacturing thereof and light emitting device

A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of T&#xdc;V Rheinland and more than 90% of wide color gamut.

Light-emitting diode device

A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Low blue light backlight module

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q(0Al), first configuration Q(1Al), second configuration Q(2Al), third configuration Q(3Al), and fourth configuration Q(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Wavelength converting material and light emitting device

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClBrI), wherein 0&#x2264;a&#x2264;1, 0&#x2264;b&#x2264;1.

Application of quantum dot composite material

A perovskite luminescent nanocrystal has a chemical formula represented by: CsBX, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the CsBXperovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the CsBXperovskite luminescent nanocrystal is greater than 1 and less than 4.

Perovskite luminescent nanocrystal, light emitting device, and manufacturing method for perovskite luminescent nanocrystal

An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.

Overcoating inorganic quantum dot and method for preparing the same

Quantum dot composite material and manufacturing method and application thereof

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Hsinchu, Taiwan

Hung-Chia Wang