Champion Microelectronic Corporation

Yutechnix, Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Hung-Chen Lin

Haiping Dun

Ho-Yuan Yu

Penny Hung

Chia-Ren Lin

Apparatus and other embodiments associated with high speed and high breakdown voltage MOS rectifier are disclosed. A Junction All Around structure, where a deep trench structure surrounds and encloses a P-N junction or a MOS structure, is created and applied in various rectifiers. In one embodiment, multiple deep trenches in concentric ring circles enclosed several horizontal P-N junctions in concentric ring circles. In another embodiment, an enclosed deep trench in ring circle surrounds a horizontal P-N junction, which results in a planar N-channel MOS during forward bias. This structure can be extended to multiple deep trenches with associated horizontal P-N junctions.

Deep trench surrounded MOSFET with planar MOS gate

Apparatus and other embodiments associated with high speed and high breakdown voltage MOS rectifier are disclosed. A Junction All Around structure, where a deep trench structure surrounds and encloses a P-N junction or a MOS structure, is created and applied in various rectifiers. In one embodiment, an enclosed deep trench in ring shape surrounds a vertical MOS structure plus a shallow trench gate in the center to create a device with very high breakdown voltage and very low leakage current. This structure is extended to multiple deep trenches and shallow trenches alternating each other.

Double trench MOSFET with trench gate

Apparatus and other embodiments associated with high speed and high breakdown voltage rectifier are disclosed. A Junction All Around structure, where a deep trench structure surrounds and encloses a P-N junction or a MOS structure, is created and applied in various rectifiers. In one embodiment, multiple deep trenches in ring shape enclosed a vertical P-N junction. For each deep trench, a corresponding wider ring-shape P+ region is created on top of a N&#x2212; epi layer. This enclosed deep trench surrounding a vertical P-N junction and a thinner N&#x2212; epitaxial layer allow higher reverse bias voltage and low leakage current. In another embodiment, an enclosed deep trench in ring shape surrounds a horizontal P-N junction, which results in a planar N-channel MOS during forward bias. The structure can be extended to multiple deep trenches with associated horizontal P-N junctions. In a further embodiment, an enclosed deep trench in ring shape surrounds a vertical MOS structure plus a shallow trench gate in the center to create yet another device with very high breakdown voltage and very low leakage current. This structure can be extended to multiple deep trenches and shallow trenches as well.

Deep trench MOS barrier junction all around rectifier and MOSFET

A method for removing air micro-bubbles from photoresist used to purge a new photoresist filter is disclosed. The method includes flowing photoresist through a photoresist filter to remove air trapped in the photoresist filter, where the trapped air forms air micro-bubbles in the photoresist; collecting, in a buffer tank, the photoresist with air micro-bubbles; removing, in the buffer tank, the air micro-bubbles from the photoresist; and transferring the photoresist without air micro-bubbles from the buffer tank to photolithography equipment.

Photoresist recycling apparatus

Apparatus, methods and other embodiments associated with a high speed and high breakdown voltage Schottky rectifier are disclosed. In one embodiment, the Schottky rectifier has three layers of N-type semiconductor, a first layer of highly doped N-type substrate at the bottom, a second layer of lightly doped epitaxial N-type material above the first layer, and a third layer of very low doping concentration N-type material created by converting the top shallow portion of the second layer without turning into P-type. The Schottky device further includes an enclosed deep trench structure close to the bottom of the second layer and can sustain high reverse bias voltage up to 2,000 volt.

Growing community of inventors

Hsinchu, Taiwan

Hung-Chen Lin