Skhynix Inc.

Other

Iksung Co., Ltd.

Daewoo Shipbuilding & Marine Engineering Co., Ltd.

Transocean Sedco Forex Ventures Limited

Hun Wook Lee

Dong Uk Lee

Hae Chang Yang

Deok-Sin Kil

Beom-Yong Kim

Jong Hyuk Cha

Chang Hyeon Kim

Kee Wook Yang

Gue Ssuk Kang

Gi Yun Lee

Norman D Howard

Yunn-Ghee Kim

Su-Man Eo

Sung-Gyu Choi

Sang-Jin Hur

A semiconductor memory device and a method of operating the semiconductor memory device are provided. The semiconductor memory device includes a memory block including a plurality of sub-blocks, a peripheral circuit configured to perform a program operation on the memory block, and control logic configured to control the peripheral circuit to perform the program operation on the memory block, wherein the program operation comprises programming to program normal data to a first sub-block, allocated to be a normal sub-block, among the plurality of sub-blocks, and programming parity data of the normal data to a second sub-block, allocated to be a backup block, among the plurality of sub-blocks.

Semiconductor memory device and operating method of the semiconductor memory device

The present disclosure provides a memory controller including a state detector detecting whether the memory device is in an idle state, a program controller, based on detection information that indicates a state of the memory device, selecting neighboring strings that are adjacent to a string that is coupled to a memory cell, among the memory cells, on which a program operation or a read operation was performed before the detecting, selecting monitoring memory cells that are coupled to at least one word line, the memory cells being a part of the neighboring strings, and controlling the memory device to perform a plurality of loops to program the monitoring memory cells, and a bad block selector selecting a memory block with the monitoring memory cells as a bad block based on a rate of increase in threshold voltage of a threshold voltage distribution of the monitoring memory cells.

Memory controller and operating method thereof

A memory controller that controls a memory device including a memory block includes an initial program controller configured to control the memory device to program at least one or more monitoring memory cells from among memory cells respectively connected to monitoring word lines from among a plurality of word lines connected to the memory block, a pre-read controller configured to generate a shifting information of a threshold voltage distribution of the monitoring memory cells based on a result of reading the monitoring memory cells before a read operation is performed on the memory block, and a pre-program controller configured to control the memory device to perform the read operation after applying a pre-program voltage having a voltage level determined according to the shifting information to the plurality of word lines.

Memory controller and method of operating the memory controller

The present technology relates to an electronic device. A memory device that controls a voltage applied to each line to prevent or mitigate a channel negative boosting phenomenon during a sensing operation includes a memory block connected to a plurality of lines, a peripheral circuit configured to perform a sensing operation on selected memory cells connected to a selected word line among the plurality of lines, and control logic configured to control voltages applied to drain select lines, source select lines, and word lines between the drain select lines and the source select lines among the plurality of lines, during the sensing operation and an equalizing operation performed after the sensing operation. The control logic controls a voltage applied to an unselected drain select line according to whether a cell string is shared with a selected drain select line among the drain select lines, during the sensing operation.

Memory device and method of operating the memory device

A controller including a test manager configured to output a program command for performing a program operation of a memory block and a suspend command for stopping the program operation, and a memory interface configured to transmit the program command to a memory device including the memory block, and transmit the suspend command to the memory device after a set time elapses. The test manager outputs a read command for reading memory cells included in the memory block, the memory interface calculates a count value by counting data output from the memory device in response to the read command, and the test manager generates status information on the memory block according to the count value.

Controller and memory system including the controller

A controller comprises an error correction circuit configured to check an error bit number of error bits in the read data and correct the error bits; a read retry range setting circuit configured to reset a preset read retry range with respect to the read data, and set a new read retry range based on the error bit number and an error correction capability of the error correction circuit; a read voltage setting circuit configured to reset the set read voltage and set, as a new read voltage, a voltage among a plurality of voltages of the reset read retry range, corresponding to the new read retry range; and a flash control circuit configured to control the memory device to perform a read retry operation on the stored data, using the new read voltage.

Controller, memory system including the controller, and operating method of the memory system

A method for fabricating a semiconductor device includes: forming a bottom electrode of a high aspect ratio; forming an interface layer by sequentially performing a first plasma process and a second plasma process onto a surface of the bottom electrode; forming a dielectric layer over the interface layer; and forming a top electrode over the dielectric layer.

Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes: forming a bottom electrode of a high aspect ratio; forming an interface layer by sequentially performing a first plasma process and a second plasma process onto a surface of the bottom electrode; forming a dielectric layer over the interface layer; and forming a top electrode over the dielectric layer.

The present invention relates to a melt-blown fiber web having improved elasticity and cohesion, and a manufacturing method therefor. The objective of the present invention is accomplished by a melt-blown fiber web comprising a thermoplastic resin which comprises 10 to 60 wt % of thermoplastic resin microfibers and 40 to 90 wt % of non-circular cross-sectional hollow conjugated staple fibers with respect to the total weight of the fiber web.

Melt-blown fiber web having improved elasticity and cohesion, and manufacturing method therefor

A waved meltblown fiber web of the present invention relates to a fiber web prepared by a meltblown method and is characterized by a preparation method in which a meltblown microfiber comes in contact with collection portions having different surface velocities so as to be collected. The waved meltblown fiber web of the present invention is characterized in that: a part of meltblown microfibers reaches a low velocity collection portion so as to be horizontally layered, thereby forming a horizontal fiber layer (); another part of the meltblown microfibers reaches a high velocity collection portion of which the surface velocity is greater that of the low velocity collection portion so as to form a serpentine vertical fiber layer (); and the upper end of the vertical fiber layer () becomes entangled so as to form a wave shaped wave layer () forming the uppermost portion of the fiber web.

Method of preparing a meltblown fiber web

Provided is an arctic drill ship an arctic drill ship which includes a weather tight structure protecting a drill floor from air, and a side strake supporting the weather tight structure around a drilling work area. It is possible to economically and easily manufacture the weather tight structure which minimizes the influence of outside air on the drilling operation in the polar regions, and it is possible to efficiently support the hull longitudinal strength and the weather tight structure with the use of the side strake structure solely. Therefore, a structure which may cause a disturbance in the drilling work area is minimized, and it is unnecessary to install a separate structural reinforcement member for a drilling workspace in the polar regions. In addition, the drilling workspace in the polar regions can be effectively ensured, and a spatial limitation in an upper portion of a moonpool can be solved.

Drilling ship for polar region

A modulator-demodulator (modem) used in radio interface unit (RIU) is modeled as master and slave, respectively, so as to allow a rapid handling of service, a stabilized system, and an efficient utilization of wireless systems. The RIU in wireless local loop network system, in which the RIU has a subscriber interface module for interface with subscriber terminal and data, a high frequency processing module for transmitting/receiving radio data to/from a radio port via an antenna, and a modem for converting and interfacing data between the subscriber interface module and the high frequency module, includes: a modem unit having a master modem which performs an automatic frequency control function for a direct control of a high frequency, power control function, and automatic gain control function, and is provided with a pilot channel, power control channel, and signaling channel only when the master modem operates as a primary one, and a plurality of slave modems which have pilot, power control and signaling channels and receive power control and signaling channels only when the slave modems operate as a primary one, and which receive only the power control and signaling channels when they operate as a secondary one; and a control module for controlling transmitting/receiving state of the modem unit and state of the subscriber interface module.

Growing community of inventors

Incheon, South Korea

Hun Wook Lee