Lg Display Co., Ltd.

Hun Jang

Daeyoung Seo

Soyoung Lee

Sul Lee

Minseok Kim

BuYeol Lee

Joon Young Yang

Cheolhwan Lee

EuiHyun Chung

Wondoo Kim

HyunGon Kim

Doohyun Yoon

HyeSeon Eom

Sanghoon Jung

JoonYoung Yang

Gyu Tae Kang

Disclosed is a transparent micro-LED unit pixel circuit capable of driving red, green, and blue micro-LED elements with one driving transistor to increase an area size of a transmissive area, and a transparent micro-LED display device including the same. The transparent micro-LED unit pixel circuit includes first to third micro-LEDs emitting light based on a driving current; a driving transistor configured to control the driving current, wherein the driving transistor is disposed between and connected to an anode electrode of each of the first micro-LED, the second micro-LED, and the third micro-LED and a high-potential power line; a storage capacitor disposed between and connected to a gate electrode and a source electrode of the driving transistor; and a first transistor configured to apply a data voltage to the gate electrode of the driving transistor.

Pixel circuit and display device including the same

A display device according to an example includes a plurality of sub pixels disposed on a substrate, and a plurality of touch units disposed on the substrate. Each sub pixel can include a driving transistor, a light emitting diode, and a pixel electrode connecting the driving transistor and the light emitting diode. Each touch unit can include a touch sensing transistor and a touch electrode connected to the touch sensing transistor, where the pixel electrode and the touch electrode are disposed on the same layer. Accordingly, the pixel electrode and the touch electrode are disposed on the substrate to sense the touch by a self-capacitance manner.

Display device

A display device according to an example includes a first power sharing line disposed to be parallel with a first direction, first and second pixels disposed along a second direction crossing the first direction with the first power sharing line interposed therebetween, and a second power sharing line disposed to be parallel with the first power sharing line with any one of the first and second pixels interposed therebetween.

A light emitting display device includes a substrate, a pixel area having an emission area and a non-emission area on the substrate, a light emitting diode disposed in the pixel area, and a pixel driving circuit electrically connected with the light emitting diode and having a driving thin film transistor disposed in the emission area, wherein light emitted from the light emitting diode can be emitted to the outside of the substrate by passing through the substrate.

Light emitting display apparatus including driving thin film transistor disposed in emission area

A pixel comprises a pixel circuit connected to gate and data lines, and a light emitting diode having a first electrode connected to the pixel circuit, wherein the pixel circuit may include a driving thin film transistor connected to the first electrode of the light emitting diode, a first capacitor formed in a horizontal direction between a gate electrode and a source electrode of the driving thin film transistor, and a second capacitor formed in a vertical direction between the gate electrode of the driving thin film transistor and the first electrode of the light emitting diode.

Pixel having capacitor overlapping with opening area and display device including the same

A light emitting display device comprises a subpixel having a light emitting element disposed in a light emission area on a substrate and a circuit area in which a circuit for driving the light emitting element is disposed, a gate line disposed in the circuit area in a first direction, and at least one power line disposed in a second direction crossing the first direction, the at least one power line including a first power bridge line and a second power bridge line which are spaced apart from each other in the first direction.

Light emitting display device

A pixel is discussed, which is disposed in a pixel area defined by a gate line, a data line and a pixel power line, and includes a light emission portion and a pixel circuit, wherein the pixel circuit can include a protrusion electrode protruded from the gate line along a length direction of the data line, and first and second thin film transistors disposed in parallel between the light emission portion and the gate line, using the protrusion electrode as a gate electrode.

Pixel with improved aperture ratio and display device including the same

A display device with a reduced bezel area is disclosed. In one embodiment, the display device includes a cut-out region on which an electronic component is to be placed, and a display panel for displaying an image. The cut-out region extends from a first side toward a second side of the display device. The display panel includes a first display area between a third side of the display device and the cut-out region, a second display area between a fourth side of the display device and the cut-out region, and a third display area between the third side and the fourth side of the display device, the third display area disposed below the first display area, the second display area, and the cut-out region toward the second side of the display device.

Panel array for display device with narrow bezel

The present disclosure relates to a thin film transistor substrate having a metal oxide semiconductor for the fringe field type flat panel displays and a method for manufacturing the same. The thin film transistor substrate having an oxide semiconductor layer can include a substrate including pixel region; a gate element formed on the substrate; a gate insulating layer covering the gate element; a channel layer on the gate insulating layer, a source area expanded form a first side of the channel layer, a drain area expanded from a second side of the channel layer, and a pixel electrode expanded from the drain area to the pixel region; an etch stopper formed on the channel layer; a data element formed on the etch stopper; and a common electrode formed on the passivation layer and within the pixel region.

Thin film transistor substrate having metal oxide semiconductor and manufacturing the same

A thin film transistor substrate and a liquid crystal display device are disclosed. The thin film transistor substrate comprises gate lines arranged on a substrate in a first direction and sub gate lines connected with the gate lines; data lines arranged on the substrate in a second direction to define a pixel including a first pixel and a second pixel, together with the gate lines; a semiconductor layer formed overlapping with each of the gate lines, the sub gate lines and the data lines and connected with the date lines; and a pixel electrode connected with the semiconductor layer. An aperture ratio may be improved at high resolution.

Thin film transistor substrate and liquid crystal display device using the same

A thin film transistor substrate includes: pluralities of gate lines and data lines arranged to define a plurality of pixel regions, and a plurality of thin film transistors formed on the pixel regions in such a manner as to include first and second thin film transistors connected to the same gate line and the pixel regions adjacent to each other. Each of the first and second thin film transistors includes: a gate electrode connected to the gate line; a semiconductor layer formed on the gate line in an octagon shape; a source electrode connected to the data line; and a drain electrode formed in an opposite shape to the source electrode.

Thin film transistor substrate

Disclosed is a liquid crystal display (LCD) device capable of enhancing an aperture ratio and a transmittance ratio. The LCD device includes a first substrate and a second substrate; a plurality of gate lines formed on the first substrate, each gate line having a first region and a second region with the width less than that of the first region; a plurality of data lines disposed so as to be perpendicular to the gate lines to define a plurality of pixel regions; a thin film transistor (TFT) formed on the first region of the gate line; a common electrode and a pixel electrode formed on the first substrate, and forming an electric field; a black matrix and a color filter layer formed on the second substrate; and a liquid crystal (LC) layer formed between the first substrate and the second substrate, wherein the first regions and the second regions of the gate lines are alternately disposed in an extending direction of the gate lines and in an extending direction of the data lines, and wherein two TFTs are formed on the first region of the gate line corresponding to the pixel region, two TFTS being respectively connected to pixel electrodes of two pixel regions adjacent to each other based on the gate line.

Liquid crystal display device and method of fabricating thereof

An array substrate for a fringe field switching mode LCD device includes a pixel electrode having a plate shape in a pixel region; and a common electrode including a plurality of bar-type openings that correspond to the pixel electrode and long axes of which are inclined at a first angle in a clockwise direction or counterclockwise direction with respect to a normal line perpendicular to the gate line, wherein a data line is formed in a zigzag shape, wherein two adjacent data lines among three adjacent data lines are disposed in parallel with each other and the other data line is linearly symmetrical with respect to the two adjacent data lines, and wherein the long axis of each of the plurality of bar-type openings is disposed in parallel with one of data lines that define the pixel region and are located at both sides of the pixel region.

Growing community of inventors

Paju-si, South Korea

Hun Jang