Samsung Electronics Co., Ltd.

Hun Hyeong Lim

Woong Hee Lee

Ki-Hyun Hwang

Eun Young Lee

Jae-young Ahn

Jin-Gyun Kim

Joon Suk Lee

Woo Sung Lee

Jin Gyun Kim

Jun-Kyu Yang

Phil-Ouk Nam

Jung Geun Jee

Eun Yeoung Choi

Kyong Won An

Hyun Yong Go

Chae Ho Kim

According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.

Semiconductor device, method of fabricating the semiconductor device, and method of forming epitaxial layer

There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals.

Method for manufacturing semiconductor device

A method of manufacturing a vertical memory device includes forming alternating and repeating insulating interlayers and sacrificial layers on a substrate, the sacrificial layers including polysilicon or amorphous silicon, forming channel holes through the insulating interlayers and the sacrificial layers, forming channels in the channel holes, etching portions of the insulating interlayers and the sacrificial layers between adjacent channels to form openings, removing the sacrificial layers to form gaps between the insulating interlayers, and forming gate lines in the gaps.

Vertical memory devices and methods of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Hun Hyeong Lim