Samsung Electronics Co., Ltd.

Hun Cha

Jin-Man Kim

Yun-sik Yang

Eun-Hee Shin

Baik-Soon Choi

Seung-Ki Chae

Min-gyu Kim

Kyung-dae Kim

Woung-kwan An

Dong-ho Kim

Byung-kwan Lee

Sung-kyeong Kim

Choung-hyep Kim

Seung-ug Kim

Chul-hui Kim

Kyoon-hee Goh

Guk-hyeong Cho

Young-chul Jeong

In-hyub Park

An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

Method for manufacturing a shield for an inductively-couple plasma apparatus

A retainer ring of a polishing head of a CMP apparatus facilitates the removal of contaminants, such as slurry debris, which have found their way into the polishing head. The retainer ring includes an annular ring body, and a plurality of contaminant outlets extending from the inner peripheral surface of the ring body to the outer peripheral surface of the ring body. Inner openings defined at the inner peripheral surface of the ring body and outer openings defined at the outer peripheral surface of the ring body by the contaminant outlets are horizontally elongated slots. Also, each of the contaminant outlets consists of a plurality of inner holes and an outer hole which is joined to the plurality of inner holes. The contaminant outlets occupy at least 30% of the radially innermost peripheral surface along a line extending circumferentially along the surface. The CMP apparatus itself includes a polishing head having such a retainer ring and a washing unit having a nozzle for spraying deionized water through the contaminant outlets of the retainer ring toward an inner space formed in the polishing head.

Polishing head of a chemical mechanical polishing apparatus and, retainer ring of the same

Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield

A semiconductor manufacturing system includes a loadlock chamber, a low level vacuum pump connected to said loadlock chamber so as to create a low level vacuum in the loadlock chamber, a processing chamber in which a semiconductor manufacturing process is carried out while the processing chamber is maintained at a high level vacuum, a gate valve interposed between and connecting the loadlock chamber and the processing chamber, and a pressure relieving device for reducing the pressure difference between the low level vacuum of the loadlock chamber and the high level vacuum of the processing chamber at the time the gate valve is opened. The pressure relieving device is a high level vacuum pump which can be dedicated to the loadlock chamber or which can be the same pump as that used to evacuate the processing chamber. The high level vacuum pump is connected to the loadlock chamber by an air valve. The system is operated under a method in which air is fed to both the air valve and with a certain delay thereafter to the gate valve. The air valve opens first, and the high level vacuum pump evacuates the loadlock chamber before the fed air opens the gate valve. In this way, particles in the loadlock chamber are prevented from being induced into the processing chamber at the time of transfer of objects from the loadlock chamber to the processing chamber through the gate valve.

Semiconductor device manufacturing system having means for reducing a

There is provided a method of etching metallic film for a semiconductor device, in which a semiconductor substrate with a metallic film exposed in a film pattern is inserted onto a chuck in a chamber of an electrostatic shielded radio frequency (ESRF) inductive-coupled plasma source, the ESRF inductive-coupled plasma source also including a coil connected to an upper electrode, a lower electrode connected to the chuck, a gas supply assembly, a pressure control assembly and a temperature control assembly. An etching gas is supplied to the chamber at a predetermined etch gas supply rate. Pressure inside the chamber is maintained at a predetermined pressure level. The upper and lower electrodes are powered with predetermined upper and lower powers, respectively, at predetermined upper and lower RFs, respectively. The chamber walls are cooled to a predetermined temperature. The metallic film is etched such that trenches in the metallic film are formed with predetermined trench qualities including a predetermined trench critical dimension no greater than a critical dimension associated with large scale integration.

Method of etching metallic film for semiconductor devices

A UV irradiation apparatus, which includes a UV lamp installed in a chamber for generating UV rays; a vacuum chuck installed below the UV lamp for supporting and moving a wafer; and, a reflector surrounding the UV lamp for concentrating UV rays on the vacuum chuck. The apparatus further includes heating blocks for controlling the temperature at both sides of the vacuum chuck. Thus, it is possible to maintain an essentially constant temperature around the wafer supported by the vacuum chuck. As a result of the temperature control, when a protection tape attached to the front side of the wafer is irradiated with UV rays, an adhesive of the protective tape can be effectively degraded by a chemically reaction under optimum conditions, to thereby easily detach the protection tape from the wafer.

UV irradiation apparatus

Growing community of inventors

Kyunggi-do, South Korea

Hun Cha