Vanguard International Semiconductor Singapore Pte. Ltd.

Globalfoundries Singapore Pte. Ltd.

Globalfoundries Inc.

Vanguard Iniernational Semiconductor Singapore Pte. Ltd.

Humberto Campanella Pineda

Rakesh Kumar

You Qian

Joan Josep Giner De Haro

Anthony K Stamper

Vibhor Jain

Jeffrey C Maling

Sharath Poikayil Satheesh

Qizhi Liu

John Joseph Pekarik

Rajesh Sankaranarayanan Nair

You Pak-Chum Qian

A method for packaging a MEMS device includes the following steps. A metal cap is provided that is partially anchored to a wafer comprising the MEMS device where at least one point between the cap and the wafer is unanchored, the metal cap arranged to at least substantially extend over the MEMS device. An electrical contact pad is electrically coupled to the MEMS device. A sealing layer is provided over the metal cap and the wafer such that the sealing layer seals a gap between an unanchored portion of the metal cap and the wafer to encapsulate the MEMS device, where the electrical contact pad and the metal cap include the same composition.

Methods for packaging a microelectromechanical systems device

Methods of designing a BAW resonator and filter and the resulting devices are provided. Embodiments include patterning a bottom electrode of a resonator; patterning a top electrode of the resonator; and intersecting areas of the top and bottom electrodes to provide an effective area of the resonator, wherein the effective area includes a closed-loop contour line including a pulse function pattern with pre-defined amplitude, period and a number of repetitions of pulses along the closed-loop contour line.

Acoustic resonator and filter with electrode having zig-zag edge and method for producing the same

A MEMS device may include a first electrode region; a first piezoelectric layer arranged over the first electrode region; a second electrode region arranged over the first piezoelectric layer; a second piezoelectric layer arranged over the first piezoelectric layer and the second electrode region; a third electrode region arranged over the second piezoelectric layer; a first input port coupled to the first electrode region and/or the second electrode region for providing a first electrical signal to the first piezoelectric layer to generate a first vibration in the first piezoelectric layer; a second input port coupled to the second electrode region and/or the third electrode region for providing a second electrical signal to the second piezoelectric layer to generate a second vibration in the second piezoelectric layer; and an output port configured to receive an output signal including a superposition of the first vibration and the second vibration.

Microelectromechanical systems, devices, and methods for fabricating a microelectromechanical systems device, and methods for generating a plurality of frequencies

A resonator device may include a stacked first resonator and second resonator. The first resonator may be configured to resonate at a first operating frequency, and the second resonator may be configured to resonate at a second operating frequency different from the first operating frequency. The first resonator may include a first electrode and a first active layer arranged over the first electrode. The second resonator may include a second active layer arranged over the first active layer, and a second electrode arranged over the second active layer. The stacked first resonator and second resonator may be coupled to a reconfiguration switch for selectively operating at the first operating frequency or the second operating frequency. One of the first resonator and the second resonator is active upon selection by the reconfiguration switch, while the other resonator is inactive.

Reconfigurable resonator devices, methods of forming reconfigurable resonator devices, and operations thereof

Transistor-based sensors and fabrication methods for a transistor-based sensor. A semiconductor layer is arranged over a substrate, and an interconnect structure is arranged over the semiconductor layer and the substrate. The semiconductor layer includes first sections composed of a semiconductor material, second sections composed of the semiconductor material, and cavities. The first sections have an alternating arrangement with the second sections in a lateral direction. The semiconductor material of the first sections is polycrystalline, and the semiconductor material of the second sections is single-crystal. First and second openings each extend in a vertical direction through the metallization levels of the interconnect structure to the semiconductor layer or through the substrate to the semiconductor layer. The first opening defines a first fluid inlet coupled to the cavities, and the second opening defines a first fluid outlet coupled to the cavities.

Sensors based on a heterojunction bipolar transistor construction

A MEMS device including an active layer having a first surface and a second surface is provided. A first electrode and a second electrode, and at least one reconfigurable electrode segment are arranged over the first surface of the active layer. At least one reconfiguration layer is arranged over the second surface of the active layer. The at least one reconfigurable electrode segment and the at least one reconfiguration layer overlaps. One or more via contacts are disposed through the active layer configured to couple the at least one reconfigurable electrode segment and the at least one reconfiguration layer. The at least one reconfiguration layer is coupled to a reconfiguration switch for reconfiguring electrical connections to the at least one reconfigurable electrode segment. The MEMS device is configured to generate different resonant frequencies by reconfiguring the electrical connections to the at least one reconfigurable electrode segment using the reconfiguration switch.

Reconfigurable MEMS devices, methods of forming reconfigurable MEMS devices, and methods for reconfiguring frequencies of a MEMS device

A microelectromechanical systems (MEMS) package may include a wafer having a MEMS device; a metal cap partially anchored to the wafer where at least one point between the cap and the wafer is unanchored, the metal cap at least substantially extending over the MEMS device; an electrical contact pad electrically coupled to the MEMS device; and a sealing layer disposed over the metal cap and the wafer, such that the sealing layer seals a gap between an unanchored portion of the metal cap and the wafer to encapsulate the MEMS device; wherein the electrical contact pad and the metal cap include the same composition.

Microelectromechanical systems packages and methods for packaging a microelectromechanical systems device

A method for forming a lamb acoustic wave resonator and filter and the resulting device are provided. Embodiments include forming a sacrificial layer over a substrate; forming a first electrode over the sacrificial layer; forming a piezoelectric thin film over the first electrode; forming a second electrode over the piezoelectric thin film; forming a hardmask over the second electrode; etching through the hardmask and the second electrode down to the piezoelectric thin film forming self-aligned vias; forming and patterning a photoresist layer over the self-aligned vias; etching through the photoresist layer forming cavities extending through the vias and to the sacrificial layer; and removing the sacrificial layer forming a cavity gap under the cavities and first metal electrode.

Lamb acoustic wave resonator and filter with self-aligned cavity via

A device, such as a MEMS device, with stress tuning to achieve a desired stack stress across the wafer. The stress tuning includes trimming a stress compensation layer over a target layer having different stresses in different target layer regions. The trimming may include ion beam trimming to produce a stress compensation layer having different thicknesses over the different target layer regions to balance the stress of the target layer to a desired stress. The desired stress may result in almost zero residual stress to produce an almost flat MEMS device.

Devices with localized strain and stress tuning

A method of forming a CMOS device and a GaN PA structure on a 100 Si substrate having a surface orientated in 111 direction and the resulting device are provided. Embodiments include forming a device with a protective layer over a portion of a Si substrate; forming a V-shaped groove in the Si substrate; forming a buffer layer, a GaN layer, an AlGaN layer and a passivation layer sequentially over the Si substrate; forming trenches through the passivation and the AlGaN layers; forming second trenches through the passivation layer; forming electrode structures over portions of the passivation layer and filling the first and second trenches; removing portions of the passivation layer, the AlGaN layer and the GaN layer outside of the V-shaped groove down to the buffer layer; forming a dielectric layer over the Si substrate; and forming vias through the dielectric layer down to electrode structures and the device.

Gallium nitride (GaN) power amplifiers (PA) with angled electrodes and 100 CMOS and method for producing the same

An integrated monolithic device with a micro-electromechanical system (MEMS) and an integrated circuit (IC) and a method of forming thereof is disclosed. The monolithic device includes a substrate with IC components and a MEMS formed over the IC. A back-end-of-line (BEOL) dielectric having IC interconnect pads in a pad level is formed over the substrate. A MEMS is formed over the BEOL dielectric with the IC interconnect pads. The MEMS includes a MEMS stack having an active MEMS layer and patterned top and bottom MEMS electrodes formed on the top and bottom surfaces of the active MEMS layer. IC MEMS contact vias are formed at least partially through the active MEMS layer. IC MEMS contacts are formed in the IC MEMS contact vias in the active MEMS layer and configured to couple to the IC interconnect pads.

Growing community of inventors

Singapore, Singapore

Humberto Campanella Pineda