Samsung Mobile Display Co., Ltd.

Hul-Won Yang

Min-Kyu Kim

Jae-Kyeong Jeong

Jin-Seong Park

Jong-Han Jeong

Tae-Kyung Ahn

Yeon-Gon Mo

Kwang-Suk Kim

Hyun-Joong Chung

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

Thin film transistor, method of manufacturing the same and flat panel display device having the same

Growing community of inventors

Yongin, South Korea

Hul-Won Yang