Intel Corporation

Huiying Liu

Justin Brockman

Robert S Chau

Ravi Pillarisetty

Brian S Doyle

Niloy Mukherjee

Uday Shah

Prashant Majhi

Kaan Oguz

Elijah V Karpov

Oleg Golonzka

Christopher J Wiegand

Markus Kuhn

Angeline Smith

Tofizur Rahman

Daniel Ouellette

Andrew Smith

Ryan E Arch

James Pellegren

Michael Robinson

Aaron Littlejohn

A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.

Magnetic memory devices and methods of fabrication

A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.

Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication

Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Resistive memory cells and precursors thereof, methods of making the same, and devices including the same

Growing community of inventors

Portland, OR, United States of America

Huiying Liu