Enraytek Optoelectronics Co., Ltd.

Jade Bird Display (Shanghai) Limited

Hong Kong Beida Jade Bird Display Limited

Shanghai Ocean University

Huiwen Xu

Qiming Li

Yu Zhang

Jing Xie

Qunchao Xu

Lei Zhang

Shuai Zhang

Fang Ou

Jinfeng Wang

Tingting Yu

Wing Cheung Chong

Wenbo Huang

Xingyin Wu

Houyong Ma

Ling Tong

Zhengguo Yu

Xiushan Zhu

A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures vertically, and/or horizontally and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Systems and methods for multi-color LED pixel unit

A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted substantially vertically upward through each of the LED structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Systems and methods for multi-color LED pixel unit with vertical light emission

A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted horizontally from each of the LED structures and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Systems and methods for multi-color LED pixel unit with horizontal light emission

A semiconductor apparatus includes a driver circuit wafer including a plurality of driver circuits arranged in an array, a bonding metal layer formed over the driver circuit wafer, and a horizontally continuous functional device epi-structure layer formed over the bonding metal layer and covering the driver circuits.

Semiconductor apparatus and method of manufacturing the same

An LED chip comprises: an operation substrate; a first conductive layer disposed on a functional surface of the operation substrate; a die disposed on the first conductive layer, wherein the die comprises a first semiconductor layer and a second semiconductor layer; a first electrode layer electrically connected with the first conductive layer; and a second electrode layer electrically connected with the second semiconductor layer, wherein a first isolation layer is disposed between the second electrode layer and the first conductive layer. In embodiments of the present disclosure, the first electrode layer and the second electrode layer are disposed on the bottom surface of the operation substrate, and are formed after the LED die is formed. Therefore, a dicing process and a packaging process are not required, thus, process steps are simplified and process cost is reduced, which is conducive to achieve 'free packaging' technology.

Light emitting diode chip

LED chip

A GaN-based LED epitaxial structure comprises a non-doped GaN buffer layer, an undoped GaN layer, an N-type GaN layer, an InGaN/GaN superlattice quantum well structure, a multiple quantum well luminous layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer which are sequentially stacked, wherein the non-doped GaN buffer layer comprises a sandwich structure consisting of a GaN layer, an AlGaN layer and a GaN layer which are sequentially stacked. For the GaN-based LED epitaxial structure and the preparation method thereof, the non-doped GaN buffer layer with the sandwich structure consisting of the GaN layer, the AlGaN layer and the GaN layer is used as a buffer layer, the buffer layer changes light scattering directions by using materials with different refractive indexes and thus the luminous efficiency can be improved.

GaN-based LED epitaxial structure and preparation method thereof

A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate; etching the epitaxy stacking layer to form a first groove and a Mesa-platform on each chip-unit region; forming a first electrode on each of the Mesa-platforms, wherein the first electrodes on two neighboring chip-unit regions form a second groove; forming a first insulation layer covering the Mesa-platforms and the first electrodes, filling the second groove and partially filling the first grooves to form a third groove; etching the first insulation layer to form fourth groove; and forming an interconnection electrode, wherein the interconnection electrode fills the third groove and the fourth groove, two neighboring interconnection electrodes form a fifth groove, the interconnection electrode connects the first electrode on one chip-unit region and the first semiconductor layer on the other chip-unit region. LED formed has improved performance.

Method for manufacturing high voltage LED flip chip

A high voltage LED flip chip includes two or more regions; a Mesa-platform, the Mesa-platform in each region has a first groove; a first electrode located on the Mesa-platform, an area between the first electrodes in two adjacent regions forms a second groove; a first insulation layer covering the Mesa-platforms and the first electrodes, the first insulation layer fills the second groove and partially fills the first groove, and a part of the first groove which is not filled forms a third groove; a fourth groove formed in the first insulation layer, the fourth groove exposes a surface of the first electrode; and an interconnection electrode, the interconnection electrode comprises a first portion connecting the first semiconductor layer through the third groove in a particular region with the first electrode through the fourth groove in another region adjacent to the particular region. The LED formed has improved performance.

High voltage LED flip chip

A high-voltage flip LED chip and a manufacturing method thereof. In the high-voltage flip LED chip, a P-N electrode connecting metal block is filled into an isolation trench between two adjacent chip units and is respectively filled into a first electrode hole of one chip unit and a second electrode hole of the other chip unit to serially connect the two adjacent chips. Since the chip units are interconnected by adopting large-area metal and the metal is filled into the isolation trench, not only can the high luminous efficiency of the chip be guaranteed, but also the high reliability and excellent current spreading between the units are guaranteed, the process stability can be improved, and the rate of non-defective products and the product reliability are improved; since the isolation trenches between the chip units adopt an ODR design, the reflectivity of reflectors at the trenches can be improved and the absorption by electrodes is reduced; and since the chip has large-area spacing-controllable P and N electrodes, the heat dissipating capability of the chip is guaranteed to be good and simultaneously the packaging difficulty is reduced.

Growing community of inventors

Shanghai, China

Huiwen Xu