Quanzhou Sanan Semiconductor Technology Co., Ltd.

Tianjin Sanan Optoelectronics Co., Ltd.

Huiwen Li

Dongyan Zhang

Duxiang Wang

Shaohua Huang

Jing Wang

Yuehua Jia

Huan-Shao Kuo

Chun-Yi Wu

Wen Liu

Kuanfu Pan

A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer.

LED with ALGAINP window layer

A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.

Light-emitting component comprising fluorine-containing region with improved current spread and light dispersion

Growing community of inventors

Tianjin, China

Huiwen Li