Sandisk 3D LLC

Huiwan Xu

Er-Xuan Ping

Tanmay Kumar

Chu-Chen Fu

A nonvolatile memory cell includes a storage element, the storage element comprising a carbon material, a steering element located in series with the storage element, and a metal silicide layer located adjacent to the carbon material. A method of making a device includes forming a metal silicide over a silicon layer, forming a carbon layer over the metal silicide layer, forming a barrier layer over the carbon layer, and patterning the carbon layer, the metal silicide layer, and the silicon layer to form an array of pillars.

Growing community of inventors

Sunnyvale, CA, United States of America

Huiwan Xu