Jiangsu Leuven Instruments Co. Ltd

Huiqun Ren

Dongdong Hu

Kaidong Xu

Lu Chen

Dongchen Che

Hushan Cui

Zhongyuan Jiang

Ziming Liu

Juebin Wang

Zhiwen Zou

A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (), a vacuum transition chamber (), a reactive ion plasma etching chamber (), an ion beam etching chamber (), a film coating chamber (), and a vacuum transport chamber (). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (); then, ion beam etching is performed to etch into a fixed layer () and stopped near a bottom electrode metal layer (), leaving only a small amount of the fixed layer (); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.

Semiconductor device manufacturing method

Growing community of inventors

Jiangsu, China

Huiqun Ren