Agere Systems Inc.

Agere Systems Guardian Corp.

Huili Shao

Susan Clay Vitkavage

Allen Yen

Yi Ma

Kurt George Steiner

Joseph Ashley Taylor

Integration of low dielectric material in semiconductor circuit structures

A method of surface treating a surface and semiconductor article is disclosed. A deposited surface layer on a substrate, such as a semiconductor surface, is treated and annealed within an alkyl environment of a chemical vapor deposition chamber to passivate the surface layer by bonding with the silicon and attaching alkyl terminating chemical species on the surface of the surface layer to aid in dehydroxylating the surface. The surface layer comprises a silicon-oxy-carbide surface layer having a carbon content ranging from about 5% to about 20% at the molecular level and a dielectric constant of about 2.5 to about 3.0.

Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer

The present invention provides a method that includes defining a dummy gate structure comprising a spin on glass on a semiconductor substrate, forming a dielectric layer over the dummy gate structure, removing the dummy gate structure to form a gate opening within the dielectric layer, and forming a gate material comprising a metal within the gate opening.

Method of forming a reverse gate structure with a spin on glass process

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Orlando, FL, United States of America

Huili Shao