Samsung Electronics Co., Ltd.

Huikwon Seo

Seijin Kim

In-Soon Kim

A nonvolatile memory device includes a memory cell array having multiple memory cells, a data input/output buffer for temporarily storing data to be stored in the memory cells, and a data scanner for scanning the data stored temporarily in the data input/output buffer. The nonvolatile memory device further includes control logic for reading address information of a memory cell in which at least a portion of the data is to be stored and selectively performing a data scan operation according to the read address information.

Growing community of inventors

Hwaseong-si, South Korea

Huikwon Seo