Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Boe Technology Groupco., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Wuhan Boe Optoelectronics Technology Co., Ltd.

Huibin Guo

Shoukun Wang

Yuchun Feng

Xiaoxiang Zhang

Liangliang Li

Mingxuan Liu

Yongzhi Song

Wenqing Xu

Xiaolong Li

Jinchao Bai

Zongjie Guo

Jing Wang

Zumou Wu

Xiaowei Liu

Zheng Liu

Yao Liu

Xiangqian Ding

Xi Chen

Hao Han

Fangbin Fu

Xibin Shao

Xiao Han

Jianfeng Yuan

Zhichao Zhang

Liping Luo

Jiantao Liu

Yanping Liao

Zhenyu Zhang

Tsungchieh Kuo

Tsung Chieh Kuo

Seung Moo Rim

Dongxi Li

Zhichang Liu

Yihe Jia

Xiaming Zhu

Seung Min Lee

Tsung-Chieh Kuo

Young Tae Hong

An oxide thin film transistor includes a gate electrode, and a first active layer structure and a second active layer structure arranged subsequently, the first active layer structure includes a first conductive connection portion and a second conductive connection portion arranged oppositely, the second active layer structure includes a third conductive connection portion and a fourth conductive connection portion arranged oppositely, and the second oxide semiconductor pattern respectively coupled to the third conductive connection portion and the fourth conductive connection portion, and an orthographic projection of the first oxide semiconductor pattern on the substrate and an orthographic projection of the second oxide semiconductor pattern on the substrate are both located within an orthographic projection of the gate electrode on the substrate, the second conductive connection portion is coupled to the third conductive connection portion.

Oxide thin film transistor and method for driving the same, display device

A phase shift mask includes a transparent substrate and light-shielding portions. The light-shielding portions include a first light-shielding portion, and over one side of it, a first compensating light-shielding portion, which has a first distance to the first light-shielding portion and a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask. The light-shielding portions can further include a second compensating light-shielding portion, having a second distance to another side of the first light-shielding portion and a second width smaller than the resolution of the exposing machine. The first distance and the second distance respectively allow the first and the second compensating light-shielding portion to reduce an exposure at a region corresponding to two sides of the first light-shielding portion during the exposure process. A method manufacturing an electronic component utilizing the phase shift mask is also provided.

Phase shift mask and electronic component manufacturing method

A display panel includes a method of fabricating an array substrate. The method includes forming a metal layer () on a substrate, and patterning the metal layer () using a phase shift mask to form a pattern of metal wiring. The phase shift mask includes a substrate and a wiring light shielding portion () on the substrate (). The wiring light shielding portion () includes a light shielding region () and a phase shift region (). In a direction perpendicular to the extending direction of the wiring light shielding portion () a width of the light shielding region () is larger than a width of the pattern of the metal wiring formed by the wiring light shielding portion ().

Phase shift mask, array substrate, fabrication method thereof and display apparatus

An array substrate and a manufacturing method thereof, a display panel and a display device are disclosed. The array substrate includes a transparent base substrate and an electrode structure provided on the transparent base substrate, the electrode structure including an anti-reflective layer and a first electrode layer, the anti-reflective layer being located between the first electrode layer and the transparent base substrate.

Array substrate and manufacturing method thereof, display panel and display device

An array substrate, a manufacturing method thereof, and a display apparatus are provided. The array substrate includes a display area and a non-display area in the periphery of the display area, the display area includes pixel regions, the display and non-display areas are provided with via holes, wherein each pixel region is provided, at a side facing a display side, with a reflection layer configured to reflect light irradiated thereon from an external light source to form a display image; and an anti-deterioration layer in contact with the reflection layer is provided in the via holes in the display and non-display areas. Thus, by using a new material, utilization of external light source is improved without additional masking process, and connection in via holes in the display area, and especially in the non-display area is achieved, which prevents deterioration of the via holes and poor contact resistance.

Method for manufacturing array substrate, array substrate and display apparatus

Embodiments of the present disclosure disclose a thin film transistor, a method for manufacturing a thin film transistor, an array substrate, and a display device. The thin film transistor includes a source electrode and a drain electrode, each of the source electrode and the drain electrode including a metal substrate and a conductive layer covering the metal substrate. An adhesion between the conductive layer and a photoresist material is larger than an adhesion between the metal substrate and the photoresist material. The metal substrate and the conductive layer are both formed on a base substrate, an orthographic projection of the conductive layer on the base substrate covers an orthographic projection of the metal substrate on the base substrate, and. an area of the orthographic projection of the conductive layer on the base substrate is larger than an area of the orthographic projection of the metal substrate on the base substrate.

Thin film transistor and method for manufacturing the same, array substrate, and display device

Disclosed are a manufacturing method of a phase shift mask and a phase shift mask. The manufacturing method of a phase shift mask includes: forming a pattern of metal shielding layer on a base substrate; forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer; patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer; and etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer.

Manufacturing method of phase shift mask and phase shift mask

An array substrate includes a base substrate, a plurality of signal lines disposed at a side of the base substrate, and an organic layer disposed at a side of the plurality of signal lines facing away from the base substrate. The organic layer includes at least one auxiliary portion and a reference portion surrounding the at least one auxiliary portion, and a thickness of each auxiliary portion is less than a thickness of the reference portion.

Array substrate and method of manufacturing the same, display device

Disclosed are a mask, a display substrate and a display device. The mask comprises a substrate, a first exposure structure, a second exposure structure located at one side of the substrate and disposed opposite to each other, the first exposure structure comprises a first light transmission film layer and a first light shielding film layer, an orthographic projection of the first light shielding film layer falls within an orthographic projection of the first light transmission film layer on the substrate; the second exposure structure comprises a second light transmission film layer and a second light shielding film layer, an orthographic projection of the second light shielding film layer falls within an orthographic projection of the second light transmission film layer on the substrate; a side edge of the first exposure structure has a first zigzag structure, and a side edge of the second exposure structure has a second zigzag structure.

Mask, display substrate and display device

This disclosure provides an array substrate, a method for fabricating the same, a display panel, and a display device, where a first photo-resist layer is stripped in a changed order in that the first photo-resist layer on a source-drain is stripped through wet etching before a ohm contact layer film and an active layer film are etched in an electrically-conductive channel area (i.e., an electrically-conductive channel of a TFT is etched) to form an ohm contact layer and an active layer.

Method for preparing array substrate by stripping first photo-resist layer through wet etching before forming ohm contact layer and active layer

An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

Array substrate, fabrication method thereof, driving transistor and display panel

A method for fabricating an array substrate motherboard, an array substrate motherboard and a detection method are provided. The method for fabricating an array substrate motherboard includes depositing a first film on a substrate, wherein a first gap is present between the edge of the first film and the edge of the substrate, coating photoresist on the substrate on which the first film is deposited, and exposing and developing the photoresist to form a first scale pattern from the photoresist. One end of the first scale pattern is flush with the edge of the substrate and the other end covers the first film.

Method for fabricating array substrate motherboard, array substrate motherboard and detection method

The present disclosure provides a display substrate and a method for manufacturing the same, a display panel and a display device. The display substrate includes a base substrate; and a composite film structure formed on the base substrate and composed of at least two thin films having different refractive indexes, wherein the composite film structure is capable of absorbing light with a wavelength in a predetermined wavelength range, and the predetermined wavelength range is located between two adjacent peaks of visible light waves.

Display substrate having wide-color gamut, its manufacturing method, display panel and display device

There are provided a method of manufacturing a display substrate, a method of manufacturing a display device, and a display substrate. The method of manufacturing a display substrate comprises: providing a base substrate; forming a thin film transistor on the base substrate; forming a first conductive layer on the base substrate on which the thin film transistor is formed, the first conductive layer being electrically connected to a drain of the thin film transistor; forming a light-emitting material block; and transferring the light-emitting material block to a surface of the first conductive layer.

Method of manufacturing a display substrate, method of manufacturing a display device and display substrate

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Beijing, China

Huibin Guo