Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Nanjing Company, Limited

Hui-Zhong Zhuang

Li-Chun Tien

Ting-Wei Chiang

Chih-Liang Chen

Jung-Chan Yang

Chi-Yu Lu

Lee-Chung Lu

Pin-Dai Sue

Chung-Te Lin

Guo-Huei Wu

Jerry Chang Jui Kao

Jerry Chang-Jui Kao

Jiann-Tyng Tzeng

Shang-Chih Hsieh

Chi-Lin Liu

Wei-Cheng Lin

Tzu-Ying Lin

Tung-Heng Hsieh

Sheng-Hsiung Wang

Yung-Chen Chien

Pochun Wang

Chun-Fu Chen

Shun Li Chen

Zhe-Wei Jiang

Shih-Wei Peng

Hsiang-Jen Tseng

Ting Yu Chen

Yu-Jung Chang

Cheok-Kei Lei

Ya-Chi Chou

Po-Chun Wang

Yu-Xuan Huang

Shang-Wen Chang

Cheng-I Huang

Kuang-Ching Chang

Shih-Ming Chang

Xiangdong Chen

Yi-Kan Cheng

Kuo-Nan Yang

Ru-Gun Liu

Chih-Ming Lai

Charles Chew-Yuen Young

Yi-Hsun Chiu

Yi-Hsiung Lin

Chih-Yu Lai

Jian-Sing Li

Ching-Wei Tsai

Stefan Rusu

Po-Hsiang Huang

Fong-yuan Chang

Chin-Chou Liu

Wei-An Lai

Lipen Yuan

Shun-Li Chen

Sang Hoo Dhong

Huang-Yu Chen

Tsung-Chieh Tsai

Meng-Hung Shen

Sung-Yen Yeh

Li-Chung Hsu

Wei-Ling Chang

Shao-Lun Chien

Wei-Yu Chen

Cheng-Chi Chuang

Chung-Hsing Wang

Sheng-Hsiung Chen

Kam-Tou Sio

Yu-Ti Su

Meng-Kai Hsu

Wei-Hsiang Ma

Jyh-Kang Ting

Jiun-Jia Huang

Juing-Yi Wu

Chin-Hsiung Hsu

Chang-Yu Wu

Liang-Yao Lee

Chia-Chung Chen

Min-Hsiung Chiang

Ya Yun Liu

Chung-hsing Wang

Chih-Wei Chang

Jaw-Juinn Horng

Chung-Hui Chen

Ken-Hsien Hsieh

Chia-Tien Wu

Wen-Hao Chen

Yuan-Te Hou

Szu-Lin Liu

Cheng-Chung Lin

Chun-Chen Chen

Yung-Chin Hou

Tsung-Hsin Yu

Chih-wei Chang

Po-Chia Lai

Seid Hadi Rasouli

Ming-Zhang Kuo

Huaixin Xian

Ting-Wei Chang

Shu-Yi Ying

An integrated circuit includes a first gate electrode structure extending in a first direction. The integrated circuit includes a second gate electrode structure extending in the first direction and separated in a second direction from the first gate electrode structure. The integrated circuit includes a conductive feature. The conductive feature includes a first section electrically connected to the second portion, a second section electrically connected to the second gate structure, and a third section electrically connecting the first section and the second section, wherein the third section extends in a third direction angled with respect to both the first direction and the second direction.

Integrated circuit having angled conductive feature

A method of making an integrated circuit includes steps of selecting a first cell and a second cell for an integrated circuit layout from a cell library in an electronic design automation (EDA) system, the first and second cells each having a cell active area, a cell gate electrode, at least one fin of a first set of fins, and a cell border region, each cell also having the active area at an exposed side, and placing the first exposed side against the second exposed side at a cell border. The method also includes operations of aligning at least one fin of the first set of fins with at least one fin of the second set of fins across a cell border.

Integrated circuit having fins crossing cell boundary

An integrated circuit includes a first transistor of a first conductivity type including a first active area extending in a first direction; a second transistor of the first conductivity type including at least two second active areas extending in the first direction and a first gate stripe crossing the at least two second active areas; and a third transistor of a second conductivity type that is stacked on the second transistor and includes at least two third active areas arranged above the at least two second active areas. A top most boundary line of the first active area is aligned with a top most boundary line of one of the at least two third active areas in a layout view.

Integrated circuit

An integrated circuit structure includes a first and second power rail on a first level, a first and second set of conductive structures on a second level and a first, second and third conductive structure on a third level. The first set of conductive structures is over the first power rail. The second set of conductive structures is over the second power rail. The first conductive structure overlaps a first conductive structure of the first set of conductive structures and a first conductive structure of the second set of conductive structures. The second conductive structure overlaps a second conductive structure of the first set of conductive structures and a second conductive structure of the second set of conductive structures. The third conductive structure overlaps a third conductive structure of the first set of conductive structures and a third conductive structure of the second set of conductive structures.

Integrated circuit, system for and method of forming an integrated circuit

A flip-flop circuit includes a first inverter configured to receive a first clock signal and output a second clock signal, a second inverter configured to receive the second clock signal and output a third clock signal, a master latch including a transmission circuit, and a slave latch including a first feedback inverter. The first feedback inverter includes a first transistor configured to receive the first clock signal and a second transistor configured to receive the second clock signal, and the transmission circuit includes a third transistor configured to receive the third clock signal.

Flip-flop circuit and method

A semiconductor device includes a substrate. The semiconductor device further includes a first gate structure on a first side of the substrate. The semiconductor device further includes a second gate structure on a second side of the substrate, wherein the first side is opposite the second side. The semiconductor device further includes a gate via extending through the substrate, wherein the gate via directly connects to the first gate structure, and the gate via directly connects to the second gate structure.

Method of making amphi-FET structure and method of designing

An integrated circuit provided here includes a N-bit flip-flop and a first clock cell. The N-bit flip-flop includes first cell of a first bit and a second cell of a second bit. An output signal from the first cell is inputted into the second cell in response to a first clock signal. The first and second cells have different widths and are arranged in a first row of multiple first cell rows and a first row of multiple second cell rows respectively. The first cell rows and the second cell rows have different row heights. The first clock cell outputs the first clock signal and is arranged in the first row of the second cell rows to abut the first cell.

Footprint for multi-bit flip flop

An integrated circuit includes first bit cells, second bit cells, and clock cells. Each of first bit cells is arranged in one of multiple first cell rows having a first row height. Each of the second bit cells is arranged in one of multiple second cells rows having a second row height different from the first row height. The second bit cells extend to pass the first bit cells in a first direction. The clock cells are arranged in peripheral regions of a multi-bit flip flop cell in the first cell rows. The first and second bit cells and the clock cells are included in the multi-bit flip flop cell.

An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active region extend in a first direction, and are on a first level. The first active region includes a first and second drain/source region. The second active region includes a third drain/source region. The first insulating region is over the first drain/source region. The first contact overlaps the third drain/source region, is electrically coupled to the third drain/source region and is located on a second level. The second contact includes a first and second portion. The first portion overlaps the first and second drain/source. The second portion overlaps the first contact, the first and third drain/source region, and the first insulating region, and is electrically coupled to the first portion, and electrically insulated from the first drain/source region.

Integrated circuit and method of forming the same

An integrated circuit is provided and includes first transistors of a first circuit arranged in a first cell row having a first number of fin structures and a second transistor of a second circuit. The second transistor is coupled in parallel with a first element in the first transistors between first and second terminals of the first circuit, and arranged in a second cell row having a second number, different from the first number, of fin structures. The first element and the second transistor share a first gate extending in a first direction to pass through the first and second cell rows in a layout view. The second transistor is a duplication of the first element.

Integrated circuit in hybrid row height structure

A system for processing a layout of a semiconductor device includes a processor, and a computer readable storage medium. The processor is configured to execute instructions to generate an active region layout pattern extending in a first direction, generate a plurality of gate layout patterns extending in a second direction different from the first direction, wherein the plurality of gate layout patterns extends across the active region layout pattern, generate a plurality of source/drain region layout patterns in the active region layout pattern on opposite sides of the plurality of gate layout patterns, generate a plurality of source/drain contact layout patterns overlapping the plurality of source/drain region layout patterns, and generate one or more mark layers. Each of the mark layers labels a corresponding source/drain contact layout pattern of the plurality of source/drain contact layout patterns and is usable to indicate a width of the corresponding source/drain layout pattern.

Integrated circuit layouts with source and drain contacts of different widths

A layout method includes generating a design data comprising an electronic circuit, and generating a design layout by placing a first cell corresponding to the electronic circuit. The first cell includes a first source/drain region and a second source/drain region extending in a first direction in a first layer, a gate electrode extending in a second direction perpendicular to the first direction in a second layer, and a first conductive line arranged in a third layer over the second layer and electrically connected to one of the first source/drain region, the second source/drain region and the gate electrode. The first cell is defined by a left cell side and a right cell side. At least one of the left cell side, the right cell side, the gate electrode and the first conductive line extends in a third direction not parallel to the first and second directions.

Structure and method of rectangular cell in semiconductor device

A semiconductor device, method, and system of arranging patterns of the same are provided. The method includes generating a plurality of gate patterns and conductive patterns, wherein each of the plurality of gate patterns and conductive patterns is located at a first horizontal level and extends along a first direction. The method also includes selecting one of the gate patterns as an input pin or one of the conductive patterns as an output pin. The method further includes generating, based on a selected gate pattern or a selected conductive pattern, a plurality of metallization patterns. Each of the plurality of metallization patterns is located at a second horizontal level overlying the first horizontal level and extends along a second direction substantially perpendicular to the first direction.

Semiconductor device and method and system of arranging patterns of the same

An integrated circuit includes a first and second active region, a first conductive structure, an insulating region, a set of gates and a set of contacts. The first and second active region are in a substrate, extend in a first direction, are located on a first level, and being separated from one another in a second direction. The first conductive structure extends in the first direction, is located on the first level, and is between the first and second active region. The insulating region is located on at least the first level, and is between the first and second active region and the first conductive structure. The set of gates extend in the second direction, overlap the first conductive structure, and is located on a second level. The set of contacts extend in the second direction, overlap the first conductive structure, and is located on the second level.

Integrated circuit and method of manufacturing same

A semiconductor device includes a plurality of active regions extending in a first direction. The semiconductor device further includes a gate electrode over the plurality of active regions, wherein the gate electrode extends in a second direction perpendicular to the first direction. The semiconductor device further includes a power rail extending in the first direction. The power rail includes a first power rail portion adjacent to the first boundary, wherein the first power rail portion has a first inner edge, and a second power rail portion adjacent to the second boundary, wherein the second power rail portion has a second inner edge, and the first inner edge is offset from the second inner edge in the second direction.

Semiconductor device having power rail with non-linear edge

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Kaohsiung, Taiwan

Hui-Zhong Zhuang