Western Digital (fremont), Inc.

Winbond Electronics Corporation America

Hui Zhao

Daniele Mauri

Savas Gider

Ming Mao

Hua Zheng

A magnetic read apparatus has an air-bearing surface (ABS) and includes a read sensor and a rear magnetic bias structure. The read sensor includes first and second free layers, a spacer layer and a rear surface opposite to the ABS. The spacer layer is nonmagnetic and between the first and second free layers. The read sensor has a track width in a cross track direction parallel to the ABS. The rear magnetic bias structure magnetically biases the read sensor a stripe height direction perpendicular to the ABS. The read sensor is between the ABS and the rear magnetic bias structure. The rear magnetic bias structure has a width in the cross track direction and a length in the stripe height direction. The length is greater than the width. The width of the rear magnetic bias structure is substantially equal to the track width of the read sensor.

Dual free layer magnetic reader having a rear bias structure having a high aspect ratio

A magnetic read apparatus has an air-bearing surface (ABS) and includes a differential read sensor, side bias structure(s) and rear magnetic bias structure(s). The differential read sensor includes first and second free layers and a nonmagnetic spacer layer between the first and second free layers in a down-track direction. The side bias structure(s) are adjacent to the first and second free layers in a cross-track direction perpendicular to the down-track direction. The side bias structure(s) magnetically bias the first and second free layers in the cross-track direction. The differential read sensor is between the ABS and the rear magnetic bias structure(s). The rear magnetic bias structure(s) provide a first magnetic bias for the first free layer in a first direction along a stripe height direction perpendicular to the ABS and provide a second magnetic bias for the second free layer in a second direction opposite to the first direction.

Differential dual free layer magnetic reader

A semiconductor memory column decoder has first and second groups of parallel column lines (or column line pairs). The first and second groups of column lines are separated from each other by a gap. One or more groups of fractional I/O lines are provided, wherein each fractional I/O line is collinear with each other fractional I/O line of the same group. One fractional I/O line is provided for, and is connected to, each column line of the first and second groups of column lines. A plurality of multiplexers is provided, including one multiplexer corresponding to each fractional I/O line. Each multiplexer has an input connected to a single data line, a select input connected to a corresponding column select line, and an output connected to the corresponding fractional I/O line. At least some of the multiplexers are disposed in the gap.

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Fremont, CA, United States of America

Hui Zhao