Yangtze Memory Technologies Co., Ltd.

Wellcare (Wuhan) Medical Technology Co., Ltd.

Hui Zhang

Jingjing Geng

Meng Xiao

Yang Zhou

Zhipeng Wu

Xiangning Wang

Lu Zhang

Zhen Guo

Kai Han

Jiajia Wu

Hang Yin

Pan Wang

Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Method of forming top select gate trenches

Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, and one or more isolation structures. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). Each isolation structure surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

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Wuhan, China

Hui Zhang