United Microelectronics Corp.

Singapore University of Technology and Design

Massachusetts Institute of Technology

Airbus Singapore Private Limited

Singapore University of Technology

Hui Ying Yang

Chow-Yee Lim

Fuming Chen

Chi-Fa Ku

Rohit Nandkumar Karnik

Chih-Chien Chang

Hong Liao

Ye Wang

Jianjun Yang

Xing Hua Zhang

Chow Yee Lim

Ye Chao Li

Zhixiang Huang

Glenn Joey Sim

Zhi Qiang Mu

Jeck Chuang Tan

Yong Bin Fan

The invention generally relates to a carbon-based boron removal medium with hydroxyl group and amine group, and in particular, to a method for forming the carbon-based boron removal medium. In various embodiments, nitrogen-doped ('N-doped') graphene oxide is synthesized by a simple two-step process: (1) oxidation of graphite to graphene oxide, and (2) nitrogen-doping ('N-doping') the graphene oxide to form the amine group. The resultant N-doped graphene oxide can efficiently remove boron from aqueous solutions. The invention also generally relates to a boron sensing medium and its use in conductometric measurement techniques to detect and measure the amount of boron present in aqueous solutions.

Method of removing boric acid from an aqueous solution

In one embodiment, the invention relates to a carbon-based boron removal medium with hydroxyl groups and amine group, and in particular, to a method for forming the carbon-based boron removal medium. In a specific embodiment, nitrogen-doped ('N-doped') graphene oxide is synthesized by a simple two-step process: (1) oxidation of graphite to graphene oxide, and (2) nitrogen-doping ('N-doping') the graphene oxide to form the amine group. The resultant N-doped graphene oxide can efficiently remove boron from aqueous solutions. In another embodiment, a method of sensing or detecting the presence of boron in an aqueous solution by using a boron sensing medium comprises at least two hydroxyl groups and at least one pyridinic nitrogen or pyrrolic nitrogen or quaternary nitrogen (i.e. pyridoxine, in particular vitamin B6). The boron ions in the solution would form a highly ionized complex, which can cause significant increase in electrical conductivity of the solution, which can then be used to measure the concentration of boron in said solution.

Method of removing borate ions from an aqueous solution

A lithium (Li) ion battery includes a first electrode with a second electrode, and a shutdown polymer additive on an outer surface of the first electrode. The shutdown polymer additive includes at least two polyethylene layers, each polyethylene layer comprising a plurality of polyethylene microspheres. Each polyethylene microsphere is wrapped with carbon nanotubes. The polyethylene microspheres interconnect with each other such that the carbon nanotubes form a conductive network. The polyethylene layers are provided at predetermined areas of the outer surface of the first electrode.

Conductive carbon coated polymer for high temperature lithium ion battery shutdown deposited through 3D printing technique

A semiconductor device including a logic transistor, a non-volatile memory (NVM) cell and a contact etching stop layer (CESL) is shown. The CESL includes a first silicon nitride layer on the logic transistor but not on the NVM cell, a silicon oxide layer on the first silicon nitride layer and on the NVM cell, and a second silicon nitride layer disposed on the silicon oxide layer over the logic transistor and disposed on the silicon oxide layer on the NVM cell.

Method for fabricating semiconductor device

A manufacturing method of a semiconductor structure includes the following steps. A first polysilicon layer is formed on a substrate. A planarization process to the first polysilicon layer is performed. A first etching back process to the first polysilicon layer is performed after the planarization process. A second etching back process to the first polysilicon layer is performed after the first etching back process. A first wet clean process to the first polysilicon layer is performed after the first etching back process and before the second etching back process.

Manufacturing method of semiconductor structure

Semiconductor device and method for fabricating the same

The present invention relates to a material. In particular, it relates to a membrane for filtering water. More particularly, it relates to a membrane comprising carbon nanotubes and mixed cellulose ester porous membranes for water desalination and purification. Still more particular, the membrane comprising a fibrous substrate and carbon nanotubes formed on a fibrous substrate, wherein the surface of the carbon nanotubes is functionally modified. A microfluidic device comprising such a membrane and a method for filtering water are also disclosed.

Membrane for filtrating water

The invention relates to micro supercapacitors and nanocomposite active materials and methods of fabrication thereof.

High specific capacitance and high power density of printed flexible micro-supercapacitors

A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.

Method for performing deep n-typed well-correlated (DNW-correlated) antenna rule check of integrated circuit and semiconductor structure complying with DNW-correlated antenna rule

Growing community of inventors

Singapore, Singapore

Hui Ying Yang