Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Hui-Won Yang

Jae-Kyeong Jeong

Jong-Han Jeong

Min-Kyu Kim

Chaun-Gi Choi

Tae-Kyung Ahn

Kwang-Suk Kim

Hyun-Joong Chung

Jin-Seong Park

Yeon-gon Mo

Yeon-Gon Mo

Eun-Hyun Kim

Eun-Young Lee

Seung-Ho Jung

Jae-Wook Kang

Joo-Hee Jeon

Hye-Hyang Park

Hyeon-Sik Kim

Young-Woo Song

Jae-Heung Ha

Jong-hyuk Lee

Yeong-Gon Mo

Hyun-Soo Shin

Hun Joo Lee

Jang-Soon Im

Jae-Soon Im

Sang-Il Park

Chong-Chul Chai

Jong-Hyun Choi

Eun Young Lee

Kang Moon Jo

Sung Jae Moon

Hun-Jung Lee

Ki-Ju Im

Hye-Young Park

Joo Hee Jeon

Dong-Wook Park

Jae-Keun Lim

Hye-hyang Park

Jongmoo Huh

Hyeon Sik Kim

Ki-Wook Kim

Jong Moo Huh

Jee Hoon Kim

Won-Sik Kim

Hye Hyang Park

Ki-ju Im

Sun-Kwang Kim

Kyumin Kim

Sang Hyung Lim

Yun-gyu Lee

Su-Kyoung Yang

Chan-Woo Yang

Jaeseol Cho

Hong-Han Jeong

Byong-Deog Choi

Jae Seol Cho

Dong Ha Lee

Kyu Min Kim

A display device according to an embodiment includes: a first conductive layer that is disposed on a substrate; a transistor that is disposed on the substrate; and a light emitting element that is electrically connected to the transistor, wherein the transistor includes a semiconductor layer that at least partially overlaps the first conductive layer and is disposed on the first conductive layer, and a gate electrode that is disposed on the semiconductor layer. The semiconductor layer includes a first region that does not overlap the first conductive layer, a third region that overlaps the first conductive layer, and a second region that is disposed between the first region and the third region and traverses an edge of the first conductive layer. The first width of the semiconductor layer in the first region is smaller than a second width of the semiconductor layer in the second region.

Display device including a semiconductor layer having a region with a widened width

A display device includes a lower electrode extending in a first direction and a first active layer disposed on the lower electrode and extending in a second direction perpendicular to the first direction. The first active layer includes a first area having a first width in the first direction, a second area having a second width wider than the first width in the first direction, and overlapping the lower electrode and a third area between the first area and the second area and connecting the first area to the second area.

Display device

A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

A display device includes a substrate; a semiconductor layer disposed on the substrate; a gate insulating film disposed on the semiconductor layer; a gate layer disposed on the gate insulating film and insulated from the semiconductor layer; an insulating film disposed on the semiconductor layer and the gate layer; and a metal layer disposed on the insulating film, wherein the semiconductor layer and the gate layer are electrically connected through the metal layer, and the semiconductor layer overlaps the gate layer in a plan view.

A display device includes a substrate including a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light, a first electrode and a second electrode disposed in the first area and overlapping each other, an emission layer disposed between the first electrode and the second electrode in the first area, a first semiconductor layer disposed in the first area, and a second semiconductor layer disposed in the second area.

Display device with light transmission area

A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Transparent display device and method of manufacturing the same

A pixel circuit and an OLED display including the same are disclosed. The pixel circuit includes a driving transistor having a double gate structure, the driving transistor including a first gate electrode electrically connected to a first node, a second gate electrode electrically connected to a second node, a first electrode electrically connected to a first power supply voltage, and a second electrode electrically connected to the anode of the OLED. The pixel circuit also includes a switching transistor including a gate electrode configured to receive a scan signal, a first electrode configured to receive a data voltage, and a second electrode electrically connected to the first node. The pixel circuit further includes a storage capacitor and a compensation capacitor including a first electrode electrically connected to the second node and a second electrode electrically connected to the first electrode of the driving transistor.

Pixel circuit and organic light-emitting diode display including the same

An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Organic light-emitting display device and method of manufacturing the same

A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

Method of manufacturing capacitor, method of manufacturing organic light emitting display device including the capacitor, and organic light emitting display device manufactured by using the method

A thin film transistor (TFT) includes a gate electrode disposed on a substrate. An oxide semiconductor layer is disposed on the gate electrode. An insulation layer is disposed on the oxide semiconductor layer. The insulation layer includes a first contact hole that exposes a first part of the oxide semiconductor layer corresponding to a first end of the gate electrode and a second contact hole that exposes a second part of the oxide semiconductor layer corresponding to an opposite end of the gate electrode. A source electrode is disposed on the insulation layer and contacts the first part of the oxide semiconductor layer through the first contact hole. A drain electrode is disposed on the insulation layer and contacts the second part of the oxide semiconductor layer through the second contact hole.

Thin film transistor and organic light emitting diode display having minimal overlap of gate electrode by source and drain electrodes

A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

Method of manufacturing thin-film transistor, method of manufacturing organic light-emitting display device including the same, and thin-film transistor and organic light-emitting display device manufactured using the methods

An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Organic light-emitting display device

Growing community of inventors

Yongin, South Korea

Hui-Won Yang