Visera Technologies Company Limited

Hui-Min Yang

Zong-Ru Tu

Yu-Chi Chang

Han-Lin Wu

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.

Growing community of inventors

Hsinchu, Taiwan

Hui-Min Yang