Northrop Grumman Systems Corporation

Hui Ma

Thomas R Young

Yeong-Chang Chou

Hsu-Hwei Chen

Jansen J Uyeda

Youngmin Kim

A semiconductor device includes a plurality of base layers. A tunneling layer is disposed on the plurality of base layers. A contact layer is disposed on the tunneling layer. An alloyed metal contact is annealed on to the contact layer. The alloyed metal contact forms a first region and a second region in the contact layer. The first region of the contact layer diffuses into the tunneling layer. The second region of the contact layer resides over the tunneling layer. The tunneling layer facilitates electron mobility of the second region.

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Hui Ma