Delta Electronics, Inc.

National Central University

Hui-Ling Lin

Jen-Inn Chyi

Shih-Peng Chen

Geng-Yen Lee

A field effect transistor device is provided by the invention. The field effect transistor device includes: a substrate; a buffer layer, a channel layer, and a first barrier layer sequentially disposed on the substrate; a two-dimensional electron gas controlling layer disposed on the first barrier layer; a second barrier layer disposed on the two-dimensional electron gas controlling layer, wherein the second barrier layer has a recess passing through the second barrier layer; and a gate electrode filled into the recess and separated from the second barrier layer and the two-dimensional electron gas controlling layer by an insulating layer.

Growing community of inventors

Jhongli, Taiwan

Hui-Ling Lin