United Microelectronics Corp.

Fujian Jinhua Integrated Circuit Co., Ltd.

Hui-Ling Chuang

Shih-Fang Tzou

Kuei-Hsuan Yu

Yu-Ching Chen

Li-Wei Feng

Chien-Ting Ho

Ying-Chiao Wang

Chiu-Hsien Yeh

Chien-Cheng Tsai

Chih-Chi Cheng

Wan-Chi Wu

Hung-Jung Yan

A semiconductor structure with a capacitor landing pad includes a substrate. A capacitor contact plug is disposed on the substrate. A capacitor landing pad contacts and electrically connects the capacitor contact plug. A bit line is disposed on the substrate. A dielectric layer surrounds the capacitor landing pad. The dielectric layer includes a bottom surface lower than a top surface of the bit line.

Semiconductor structure with capacitor landing pad and method of making the same

A manufacturing method of a semiconductor memory device includes the following steps. A semiconductor substrate having a memory cell region and a peripheral region defined thereon is provided. Bit line structures are formed on the memory cell region. At least one gate structure is formed on the peripheral region. A spacer layer is formed covering the semiconductor substrate, the gate structure, and the bit line structures. The spacer layer is partly disposed on the memory cell region and partly disposed on the peripheral region. A first etching process is performed to the spacer layer for removing a part of the spacer layer on the memory cell region. At least a part of the spacer layer remains on the memory cell region after the first etching process. A second etching process is performed after the first etching process for removing the spacer layer remaining on the memory cell region.

Manufacturing method of semiconductor memory device

A manufacturing method of an epitaxial contact structure in a semiconductor memory device includes the following steps. A recess is formed in a semiconductor substrate by an etching process. An etching defect is formed in the recess by the etching process. An oxidation process is performed after the etching process. An oxide layer is formed in the recess by the oxidation process, and the etching defect is encompassed by the oxide layer. A cleaning process is performed after the oxidation process. The oxide layer and the etching defect encompassed by the oxide layer are removed by the cleaning process. An epitaxial growth process is performed to form an epitaxial contact structure in the recess after the cleaning process.

Manufacturing method of epitaxial contact structure in semiconductor memory device

Growing community of inventors

Changhua County, Taiwan

Hui-Ling Chuang