Taiwan Semiconductor Manufacturing Comp. Ltd.

Hui-Lin Sung

Chung-Liang Cheng

Chin-Szu Lee

Cheng-Yi Wu

Li-Hsuan Chu

Alan Tu

Ethan Hsiao

Sz-Yuan Hung

Sheng-Yung Lo

C W Chiu

Hong-Ying Lin

Chih-Wei Hsieh

A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Contact structure

Growing community of inventors

Hsin-Chu, Taiwan

Hui-Lin Sung