Samsung Electronics Co., Ltd.

Hui-Kwon Seo

Woo-Yeong Cho

Du-Eung Kim

Kwang-Jin Lee

Joon-Min Park

Woo-il Kim

Han-gu Sohn

Sei-jin Kim

A semiconductor integrated card includes an external package, a subscriber identification module (SIM) circuit, a plurality of SIM pins, a storage device and a plurality of memory pins. The SIM circuit is formed inside of the external package and is configured to store subscriber information. The SIM pins are formed on a surface of the external package and are electrically connected to the SIM circuit. The storage device is formed inside of the external package and is separated from the SIM circuit. The storage device includes a nonvolatile memory device. The memory pins are formed on the surface of the external package and are electrically connected to the storage device.

Semiconductor integrated circuit cards and communication systems including the same

Provided are a nonvolatile memory and related method of programming same. The nonvolatile memory includes a memory cell array with a plurality of nonvolatile memory cells and a write circuit. The write circuit is configured to write first logic state data to a first group of memory cells during a first program operation using an internally generated step-up voltage, and second logic state data to a second group of memory cells during a second program operation using an externally supplied step-up voltage.

Nonvolatile memory, memory system, and method of driving

Provided are a nonvolatile memory and related method of programming same. The nonvolatile memory includes a memory cell array with a plurality of nonvolatile memory cells and a write circuit. The write circuit is configured to write first logic state data to a first group of memory cells during a first program operation using a first internally generated step-up voltage, and second logic state data to a second group of memory cells during a second program operation using an externally supplied step-up voltage.

Example embodiments relate to a semiconductor memory system which may include a volatile memory and a non-volatile memory that share a common bus, and a method for controlling the operation of the non-volatile memory. The semiconductor memory system may include a non-volatile memory and a memory controller. The non-volatile memory may include a buffer memory that temporarily stores data to be read from or to be written to a memory cell array, and an internal controller. The memory controller may transmits a mode signal to the non-volatile memory in response to a control signal, the control signal corresponds to either a read mode or a write mode to be applied to the non-volatile memory. In response to the mode signal, the internal controller may control the data to be read to be stored in the buffer memory, if the read mode is to be applied, and the internal controller may control the buffer memory to stand-by until a write command is received, if the write mode is to be applied.

Semiconductor memory system having volatile memory and non-volatile memory that share bus, and method of controlling operation of non-volatile memory

Disclosed is a pumping voltage generating circuit in a nonvolatile semiconductor memory device. The present pumping voltage generating circuit begins a pumping operation for a wordline voltage in response to an accelerating start signal activated from a supply of an external program voltage, rather than a pumping enable signal activated from a program command. According to the pumping voltage generating circuit, the wordline voltage reaches a target voltage earlier, remarkably enhancing an overall operation speed in a nonvolatile semiconductor memory device.

Pumping voltage generating circuit in nonvolatile semiconductor memory device

A circuit and method for generating a wordline voltage in a nonvolatile semiconductor memory device. The circuit comprises a switching unit to provide an external program voltage as the wordline voltage, together with a wordline voltage pump to generate the wordline voltage by pumping a power source voltage. After the wordline voltage is raised to a first level by the external program voltage, it is further increased by a pumping operation. According the circuit and method described herein, shortens the time required to reach a target voltage.

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Suwon-si, South Korea

Hui-Kwon Seo